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PDF IF3602 Data sheet ( Hoja de datos )
| Número de pieza | IF3602 | |
| Descripción | Dual N-Channel Silicon Junction Field-Effect Transistor | |
| Fabricantes | InterFET Corporation | |
| Logotipo |  |
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01/99
B-35
IF3602
Dual N-Channel Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings = TA at 25¡C
Reverse Gate Source Voltage & Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
– 20 V
10 mA
300 mW
4 mW/°C
– 65°C to 200°C
www.DataSheet4U.com
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
Equivalent Short Circuit
Input Noise Voltage
Differential Gate Source Voltage
V(BR)GSS
IGSS
VGS(OFF)
IDSS
gfs
Ciss
Crss
IF3602
Min Max
Unit
Process NJ3600L
Test Conditions
– 20 V IG = – 1 µA, VDS = ØV
– 0.5 nA VGS = – 10V, VDS = ØV
– 0.35 – 3
30
V VDS = 10V, ID = 0.5 nA
mA VDS = 10V, VGS = ØV
Typ
750
mS VDS = 10V, VGS = ØV
f = 1 kHz
300
pF VDS = ØV, VGS = – 4V
f = 1 MHz
200
pF VDS = ØV, VGS = – 4V
f = 1 MHz
e¯N
0.3 nV/√Hz VDG = 3V, ID = 5 mA
f = 100 Hz
| VGS1 – VGS2 |
Max
100
mV VDS = 10V, VGS = ØV
TOÐ78 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Omitted,
5 Source, 6 Drain, 7 Gate, 8 Omitted
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet IF3602.PDF ] | |
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