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PDF K3699 Data sheet ( Hoja de datos )
| Número de pieza | K3699 | |
| Descripción | MOSFET ( Transistor ) - 2SK3699 | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K3699 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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2SK3699-01MR
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
200305
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220F
Applications
Switching regulators
www.DataSheet4U.com
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
900 V
Continuous drain current
VDSX *5
ID
900
±3.7
V
A
Equivalent circuit schematic
Pulsed drain current
ID(puls]
±14.8
A
Gate-source voltage
Repetitive or non-repetitive
VGS
IAR
*2
±30
3.7
V
A
Drain(D)
Maximum Avalanche Energy
EAS
*1
171.1
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
40 kV/µs
Peak Diode Recovery dV/dt
Max. power dissipation
dV/dt *3
PD Ta=25°C
Tc=25°C
5
2.16
43
kV/µs
W
Gate(G)
Source(S)
Operating and storage
temperature range
Tch
Tstg
+150
-55 to +150
°C
°C
Isolation Voltage
VISO *6
2000
*1 L=22.9mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph
*3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS<= 900V
Vrms
*2 Tch =<150°C
*5 VGS=-30V
*6 f=60Hz, t=60sec.
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Thermalcharacteristics
Item
Thermal resistance
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=900V VGS=0V Tch=25°C
VDS=720V VGS=0V
VGS=±30V VDS=0V
ID=1.85A VGS=10V
Tch=125°C
ID=1.85A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=600V ID=1.85A
VGS=10V
RGS=10 Ω
VCC=450V
ID=3.7A
VGS=10V
L=22.9mH Tch=25°C
IF=3.7A VGS=0V Tch=25°C
IF=3.7A VGS=0V
-di/dt=100A/µs Tch=25°C
Test Conditions
channel to case
channel to ambient
Min. Typ.
900
3.0
3.31
24
430
60
3.5
19
7
32
17
16.5
6.4
3.7
3.7
0.9
1.0
4.0
Max. Units
V
5.0 V
25 µA
250
100 nA
4.30 Ω
S
650 pF
90
5
29 ns
11
48
26
24.8 nC
9.6
5.6
A
1.50 V
µs
µC
Min. Typ.
Max. Units
2.907 °C/W
58.0 °C/W
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet K3699.PDF ] | |
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