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PDF VT3664164T Data sheet ( Hoja de datos )
| Número de pieza | VT3664164T | |
| Descripción | 1M X 4 Banks X 16-Bit SDRAM | |
| Fabricantes | Kreton | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de VT3664164T (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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1M x 4 BANKS x 16 BITS SDRAM
May., 2003
64Mb SDRAM
■ 3.3 volt 4Mx16
■ 125/133/143/166/183/200 MHz SDRAM
■ 4 banks, 4K refresh
GENERAL DESCRIPTION
The VT3664164T is a high-speed synchronous dynamic random access memory (SDRAM),
organized as 1M words x 4 banks x 16 bits. Using pipelined architecture technology. Accesses
www.DataShtoeett4hUe.coSmDRAM are burst oriented. Consecutive memory location in one page can be accessed
at a burst length of 1,2,4,8 or full page when a bank and row is selected by an ACTIVE
command. By having a programmable Mode Register, the system can change burst length,
latency cycle, interleave or sequential burst to maximize its performance.
FEATURES
■ 3.3V ± 0.3V power supply
■ 1,048,576 words x 4 banks x 16 bits organization
■ Four banks operation
■ Power-down Mode
■ Sequential and interleave burst
■ Burst Length: 1,2,4,8 and full page
■ CAS latency: 2 and 3
■ 4K refresh cycles/64 ms
■ Auto & self refresh
■ DQM for masking
■ Burst read single-bit write operation
■ LVTTL compatible with multiplexed address
■ All inputs are sample at the positive going edge of the system clock
■ Reflow temperature condition: Max 245℃~250℃
■ The environmental testing temperature：
All type of VT SDRAM testing temperature at 75℃(Max).
KRETON CORP.
Page 1
Ver.9
1 page  
1M x 4 BANKS x 16 BITS SDRAM
May., 2003
ABSOLUTE MAXIMUM RATINGS
PARMETER
Voltage on any pin relative to VSS
Supply voltage relative to VSS
Short circuit current
Power dissipation
Operating temperature
Storage temperature
www.DataSheet4U.com
SYMBOL
VIN, VOUT
VDD, VDDQ
IOS
PD
TOPT
TSTG
VALUE
-0.3 to +3.6
-0.3 to +3.6
50
1.0
0 to +60
-55 to +125
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended DC operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70℃)
PARAMETER
SYMBOL
MIN
TYP
MAX
Supply voltage
VDD 3.0 3.3 3.6
Input high voltage
VIH 2.0
VDD+0.3
Input low voltage
VIL -0.3
0.8
UNIT
V
V
V
UNIT
V
V
mA
W
℃
℃
NOTE
CAPACITANCE (VDD=3.3V, TA=25ºC, f=1MHz, VREF=1.4V+200mV)
PARAMETER
SYMBOL
TYP
Input capacitance (A0 - A10, BS)
CIN1
2.5
Input capacitance (/RAS, /CAS, /WE)
CIN2
2.5
Input capacitance (CKE)
CIN3
2.5
Input capacitance (CLK)
CIN4
2.5
Input capacitance (/CS)
CIN5
2.5
Input capacitance (DQM)
CIN6
2.5
Data input/output capacitance (DQ0 - DQ15)
CI/O 4.0
MAX
5
5
5
5
5
5
6.5
UNIT
Pf
Pf
Pf
Pf
Pf
Pf
Pf
KRETON CORP.
Page 5
Ver.9
5 Page 
1M x 4 BANKS x 16 BITS SDRAM
May., 2003
PA R A M E T E R
AC input Levels ( VIH/VIL )
Input rise and fall time
Input timing reference level/
www.DataSheeOt4uU.tcpoumt t i m i n g r e f e r e n c e l e v e l
Output load condition
CONDITIONS
2.0/0.8V
1ns
1.4V
50pF
AC Test Load Circuits ( for LVTTL interface ) :
VDDQ
VOUT
Device
Under
Test
VDDQ
Z = 50 ohms
AC TEST LOAD
1.4V
50 ohms
50 pF
The copyright of the products or specification is owned by Kreton Corp.
Kreton Corp. reserves the right to change products or specification without notice.
KRETON CORP.
Page 11
Ver.9
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet VT3664164T.PDF ] | |
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