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PDF A1049 Data sheet ( Hoja de datos )
| Número de pieza | A1049 | |
| Descripción | PNP Transistor - 2SA1049 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de A1049 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1049
2SA1049
Audio Frequency Amplifier Applications
Unit: mm
• Small package.
• High breakdown voltage: VCEO = −120 V
• High hFE: hFE = 200~700
• Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)
www.DataSheet•4U.cLoomw noise: NF = 1dB (typ.), 10dB (max)
• Complementary to 2SC2459.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
−120
−120
−5
−100
−20
200
125
−55~125
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
2-4E1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.13 g (typ.)
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
ICBO
VCB = −120 V, IE = 0
IEBO
VEB = −5 V, IC = 0
hFE
(Note)
VCE = −6 V, IC = −2 mA
VCE (sat)
fT
Cob
NF
IC = −10 mA, IB = −1 mA
VCE = −6 V, IC = −1 mA
VCB = −10 V, IE = 0, f = 1 MHz
VCE = −6 V, IC = −0.1 mA
f = 1 kHz, RG = 10 kΩ
Note: hFE classification GR: 200~400, BL: 350~700
Min Typ. Max Unit
⎯ ⎯ −0.1 μA
⎯ ⎯ −0.1 μA
200 ⎯ 700
⎯ ⎯ −0.3 V
⎯ 100 ⎯ MHz
⎯ 4 ⎯ pF
⎯ 1.0 10 dB
1 2007-11-01
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet A1049.PDF ] | |
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