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PDF V23990-P483-A Data sheet ( Hoja de datos )
| Número de pieza | V23990-P483-A | |
| Descripción | Flow PIM 1 | |
| Fabricantes | Tyco | |
| Logotipo |  |
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V23990-P483-A
flow PIM® 1, 600V
Maximum Ratings / Höchstzulässige Werte
Parameter
Condition
version 0303
Symbol Datasheet values
max.
Unit
Input Rectifier Bridge
Gleichrichter
Repetitive peak reverse voltage
Periodische Rückw. Spitzensperrspannung
Forward current per diode
Dauergrenzstrom
Surge forward current
Stoßstrom Grenzwert
www.DataShIe2te-tv4aUlu.ceom
Grenzlastintegral
Power dissipation per Diode
Verlustleistung pro Diode
DC current
tp=10ms
Th=80°C
Tc=80°C
Tj=25°C
tp=10ms
Tj=25°C
Tj=150°C
Th=80°C
Tc=80°C
VRRM
1600 V
IFAV 28,9 A
40, limited by nr. wires
IFSM 200 A
I2t 200 A2s
Ptot 35 W
53
Transistor Inverter
Transistor Wechselrichter
Collector-emitter break down voltage
Kollektor-Emitter-Sperrspannung
DC collector current
Kollektor-Dauergleichstrom
Repetitive peak collector current
Periodischer Kollektorspitzenstrom
Power dissipation per IGBT
Verlustleistung pro IGBT
Gate-emitter peak voltage
Gate-Emitter-Spitzenspannung
SC withstand time
Kurzschlußverhalten
Tj=150°C
tp=1ms
Tj=150°C
Th=80°C
Tc=80°C
Th=80°C
Th=80°C
Tc=80°C
Tj≤150°C VGE=15V
VCE=600 V
VCE 600 V
IC 12,6 A
16, limited by nr. of wires
Icpuls
25,2 A
Ptot 31,8 W
48,2
VGE ±20 V
tSC 10 us
Diode Inverter
Diode Wechselrichter
DC forward current
Dauergleichstrom
Repetitive peak forward current
Periodischer Spitzenstrom
Power dissipation per Diode
Verlustleistung pro Diode
Tj=150°C
tp=1ms
Tj=150°C
Th=80°C
Tc=80°C
Th=80°C
Th=80°C
Tc=80°C
IF 14,8 A
16, limited by nr. of wires
IFRM 29,5 A
Ptot 25,8 W
39,1
Transistor BRC
Transistor BRC
Collector-emitter break down voltage
Kollektor-Emitter-Sperrspannung
DC collector current
Kollektor-Dauergleichstrom
Repetitive peak collector current
Periodischer Kollektorspitzenstrom
Power dissipation per IGBT
Verlustleistung pro IGBT
Gate-emitter peak voltage
Gate-Emitter-Spitzenspannung
SC withstand time
Kurzschlußverhalten
Tj=150°C
tp=1ms
Tj=150°C
Th=80°C
Tc=80°C
Th=80°C
Th=80°C
Tc=80°C
Tj≤150°C VGE=15V
VCE=600 V
VCE 600 V
IC 8, limited by nr. of wires
A
8, limited by nr. of wires
Icpuls
19,3 A
Ptot 28,4 W
43,1
VGE ±20 V
tSC 10 us
copyright by Tyco Electronics
Rupert-Mayer-Str. 44, D81359 München
1 page  
V23990-P483-A
flow PIM® 1, 600V
Characteristic values
Description
Symbol Conditions
T(C°)
Diode BRC
Diode BRC
Diode forward voltage
Durchlaßspannung
Reverse current
Sperrstrom
Peak reverse recovery current
Rückstromspitze
Reverse recovery time
www.DataShSepeetr4reUv.ecrozmögerungszeit
Reverse recovered charge
Sperrverzögerungsladung
Reverse recovered energy
Sperrverzögerungsenergie
Thermal resistance chip to heatsink per chip
Wärmewiderstand Chip-Kühlkörper pro Chip
Thermal resistance chip to case per chip
Wärmewiderstand Chip-Gehause pro Chip
NTC-Thermistor
NTC-Widerstand
Rated resistance
Nennwiderstand
Deviation of R100
Abweichung von R100
Power dissipation given Epcos-Typ
Verlustleistung Epcos-Typ angeben
B-value
B-Wert
VF Tj=25°C
Tj=125°C
Ir Tj=25°C
IRRM
trr
Qrr
Erec
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
RthJH
RthJC
R25 TC=25°C
DR/R TC=100°C
P TC=25°C
B(25/100)
version 0303
Other conditions
(Rgon-Rgoff)
VR(V) IC(A)
VGE(V) VCE(V) IF(A)
VGS(V) VDS(V) Id(A)
Datasheet values
Min Typ Max
Unit
Rgon=51 Ohm
Rgon=51 Ohm
Rgon=51 Ohm
Rgon=51 Ohm
Thermal grease
thickness≤50um
Warmeleitpaste
Dicke≤50um λ
= 0,61 W/mK
600
15 300
15 300
15 300
15 300
8 0,7 1,37 1,5 V
1,28
0,25 uA
8A
12,6
8 ns
59
8 uC
0,37
8 mWs
0,057
2,7 K/W
1,8 K/W
Tol. ±5%
Tol. ±3%
4,2 4,7
2,56
210
3530
5,3 kOhm
%/K
mW
K
copyright by Tyco Electronics
Rupert-Mayer-Str. 44, D81359 München
5 Page 
V23990-P483-A
flow PIM® 1, 600V
Brake
version 0303
Figure 19. Typical output characteristics
Brake IGBT
Ic= f(VCE)
16
14
12
www.DataShe1e0t4U.com
8
6
4
2
0
012
parameter: tp = 250 ms
VGE parameter: from:
3 4 V CE (V) 5
Tj = 25 °C
5 V to 15 V
in 1 V steps
Figure 20. Typical output characteristics
Brake IGBT
Ic= f(VCE)
16
14
12
10
8
6
4
2
0
012
parameter: tp = 250 ms
VGE parameter: from:
3 4 V CE (V) 5
Tj = 125 °C
5 V to 15 V
in 1 V steps
Figure 21. Typical transfer characteristics
Brake IGBT
Ic= f(VGE)
16
14
12
10
8
6
125 o C
4
2
0
0246
parameter: tp = 250 ms
25 o C
8 10 V GE (V) 12
VCE = 10 V
Figure 22. Typical diode forward current as
a function of forward voltage
Brake FRED
IF=f(VF)
16
14
12
10
8
6
4
2
0
0
125 o C
25 o C
0,5 1 1,5
parameter: tp = 250 ms
2
V F (V)
copyright by Tyco Electronics
Rupert-Mayer-Str. 44, D81359 München
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet V23990-P483-A.PDF ] | |
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