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Número de pieza | TIP121 | |
Descripción | (TIP120 - TIP122) Si-Epitaxial Planar Darlington Power Transistors | |
Fabricantes | Diotec Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TIP121 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! TIP120 ... TIP122
TIP120 ... TIP122
NPN
Si-Epitaxial Planar Darlington Power Transistors
Si-Epitaxial Planar Darlington-Leistungs-Transistoren
Version 2006-10-17
10±0.2
Max. power dissipation with cooling
Max. Verlustleistung mit Kühlung
4 3.8
www.DataSheet4U.com
Type
Typ
123
1.5
0.9
2.54
Dimensions - Maße [mm]
1 = B 2/4 = C 3 = E
Collector current
Kollektorstrom
Plastic case
Kunststoffgehäuse
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Standard Lieferform in Stangen
NPN
65 W
5A
TO-220AB
2.2 g
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
TIP120 TIP121 TIP122
Collector-Emitter-volt. – Kollektor-Emitter-Spg. B open
VCEO
60 V
80 V
100 V
Collector-Base-voltage – Kollektor-Basis-Spg.
E open
VCBO
60 V
80 V
100 V
Emitter-Base-voltage – Emitter-Basis-Spannung C open
VEBO
5V
Power dissipation – Verlustleistung
without cooling – ohne Kühlung
with cooling – mit Kühlung
TA = 25°C
TC = 25°C
Ptot
Ptot
2 W 1)
65 W
Collector current – Kollektorstrom (dc)
IC 5 A
Peak Collector current – Kollektor-Spitzenstrom
Base current – Basisstrom (dc)
ICM 8 A
IB 120 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj -55...+150°C
TS -55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis 2)
IC = 0.5 A, VCE = 3 V
IC = 3 A, VCE = 3 V
Small signal current gain – Kleinsignal-Stromverstärkung
IC = 3 A, VCE = 4 V, f = 1 MHz
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
hFE 1000
hFE 1000
–
–
–
–
hfe 4
1 Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet TIP121.PDF ] |
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