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PDF TIP125 Data sheet ( Hoja de datos )

Número de pieza TIP125
Descripción (TIP120 - TIP127) Plastic Medium-Power Complementary Silicon Transistors
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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No Preview Available ! TIP125 Hoja de datos, Descripción, Manual

TIP120, TIP121, TIP122
(NPN); TIP125, TIP126,
TIP127 (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
Designed for generalpurpose amplifier and lowspeed switching
applications.
Features
High DC Current Gain
hFE = 2500 (Typ) @ IC
= 4.0 Adc
CollectorEmitter Sustaining Voltage @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) TIP120, TIP125
= 80 Vdc (Min) TIP121, TIP126
= 100 Vdc (Min) TIP122, TIP127
Low CollectorEmitter Saturation Voltage
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
= 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors
PbFree Packages are Available*
www.onsemi.com
DARLINGTON
5 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
6080100 VOLTS, 65 WATTS
MARKING
DIAGRAM
12 3
4
TO220AB
CASE 221A
STYLE 1
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
TIP12xG
AYWW
TIP12x
x
A
Y
WW
G
= Device Code
= 0, 1, 2, 5, 6, or 7
= Assembly Location
= Year
= Work Week
= PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 Rev. 9
1
Publication Order Number:
TIP120/D

1 page




TIP125 pdf
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
20
10 100 ms
5.0 500 ms
2.0
1.0
0.5
0.2
0.1
0.05
0.02
1.0
TJ = 150°C
dc
BONDING WIRE LIMITED
THERMALLY LIMITED
1 ms
@ TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
5 ms
CURVES APPLY BELOW
RATED VCEO
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
2.0 3.0 5.0 7.0 10
20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. ActiveRegion Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150°C. TJ(pk) may be calculated from the data in Figure 5.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown
10,000
5000
3000
2000
1000
500
300
200
100
50
30
20
10
1.0
TC = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc
PNP
NPN
2.0 5.0 10 20 50 100 200 500 1000
f, FREQUENCY (kHz)
Figure 7. SmallSignal Current Gain
300
TJ = 25°C
200
Cob
100
70
50
30
0.1 0.2
Cib
PNP
NPN
0.5 1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
50 100
www.onsemi.com
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