PDF TIP120 Data sheet ( Hoja de datos )

Número de pieza	TIP120
Descripción	60V, 5A, Complementary Silicon Transistor
Fabricantes	ON Semiconductor
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1. Complementary Darlington Transistor - ST Hay una vista previa y un enlace de descarga de TIP120 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas
No Preview Available ! TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Preferred Devices Plastic Medium−Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. www.DataSheet4FUe.acotumres • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − TIP120, TIP125 = 80 Vdc (Min) − TIP121, TIP126 = 100 Vdc (Min) − TIP122, TIP127 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 4.0 Vdc (Max) @ IC = 5.0 Adc • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • Pb−Free Packages are Available* http://onsemi.com DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60−80−100 VOLTS, 65 WATTS MARKING DIAGRAM 4 1 2 3 TO−220AB CASE 221A STYLE 1 TIP12xG AYWW TIP12x x A Y WW G = Device Code = 0, 1, 2, 5, 6, or 7 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 September, 2005 − Rev. 6 1 Publication Order Number: TIP120/D 1 page TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) 20 10 100 ms 5.0 500 ms 2.0 1.0 0.5 0.2 0.1 0.05 0.02 1.0 TJ = 150°C dc BONDING WIRE LIMITED THERMALLY LIMITED 1 ms @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED 5 ms CURVES APPLY BELOW RATED VCEO TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) www.DataSheet4U.com Figure 5. Active−Region Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown 10,000 5000 3000 2000 1000 500 300 200 100 50 30 20 10 1.0 TC = 25°C VCE = 4.0 Vdc IC = 3.0 Adc PNP NPN 2.0 5.0 10 20 50 100 200 500 1000 f, FREQUENCY (kHz) Figure 6. Small−Signal Current Gain 300 TJ = 25°C 200 Cob 100 70 50 30 0.1 0.2 Cib PNP NPN 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance 50 100 http://onsemi.com 5 5 Page

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