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PDF C2310 Data sheet ( Hoja de datos )
| Número de pieza | C2310 | |
| Descripción | NPN Transistor - 2SC2310 | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de C2310 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
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To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
www.DataSheAet4cUc.coormdingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
1 page  
2SC458 (LG), 2SC2310
Electrical Characteristics (Ta = 25°C)
2SC458 (LG)
2SC2310
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
30
—
—
55
—
—V
IC = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
30
—
—
50
—
—V
IC = 1 mA, RBE =
Emitter to base
breakdown voltage
V(BR)EBO
5
—— 5
— —V
IE = 10 µA, IC = 0
Collector cutoff current ICBO
Emitter cutoff current IEBO
DC current transfer ratio hFE*1
www.DaCtaoSllheecetot4rUt.ocoemmitter
saturation voltage
VCE(sat)
——
——
100 —
——
0.5 — —
0.5 — —
500 100 —
0.2 — —
0.5 µA
0.5 µA
320
0.2 V
VCB =18 V, IE = 0
VEB = 2 V, IC = 0
VCE = 12 V, IC = 2 mA
IC = 10 mA, IB = 1 mA
Base to emitter voltage VBE
Gain bandwidth product fT
Collector output
capacitance
Cob
— 0.67 0.75 — 0.67 0.75 V
VCE = 12 V, IC = 2 mA
— 230 — — 230 — MHz VCE = 12 V, IC = 2 mA
— 1.8 3.5 — 1.8 3.5 pF VCB = 10 V, IE = 0,
f = 1 MHz
Noise figure
NF — 3 5 — 3 5 dB VCE = 6 V, IC = 0.1 mA,
f = 120 Hz, Rg = 500 Ω
Small signal input
impedance
hie
— 16.5 — — 16.5 — kΩ VCE = 5V, IC = 0.1mA,
f = 270 Hz
Small signal voltage
feedback ratio
hre
— 70 — — 70 — × 10–6
Small signal current
transfer ratio
hfe
— 130 — — 130 —
Small signal output
admittance
hoe
— 11.0 — — 11.0 — µS
Note: 1. The 2SC458 (LG) and 2SC2310 are grouped by hFE as follows.
B CD
2SC458 (LG) 100 to 200 160 to 320 250 to 500
2SC2310 100 to 200 160 to 320 —
5 Page 
2SC458 (LG), 2SC2310
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
www.Da4ta. SDheeesti4gUn.cyoomur application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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For further information write to:
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Copyright © Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
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| PDF Descargar | [ Datasheet C2310.PDF ] | |
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