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PDF 2SB0968 Data sheet ( Hoja de datos )

Número de pieza 2SB0968
Descripción For Low-Frequency Output Amplification
Fabricantes Panasonic Semiconductor 
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Power Transistors
2SB0968 (2SB968)
Silicon PNP epitaxial planar type
For low-frequency output amplification
Complementary to 2SD1295
Features
Possible to solder radiation fin directly to printed circuit board
High collector-emitter voltage (Base open) VCEO
Large collector power dissipation PC
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
www.DCaotlaleSchtoere-et4mUit.tceormvoltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation (TC = 25°C)
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
50
40
5
1.5
3
10
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
6.5±0.1
5.3±0.1
4.35±0.1
Unit: mm
2.3±0.1
0.5±0.1
1.0±0.1
2
0.1±0.05
0.5±0.1
1 3 0.75±0.1
2.3±0.1
4.6±0.1
(5.3)
(4.35)
(3.0)
12
1: Base
2: Collector
3: Emitter
EIAJ: SC-63
U-G1 Package
3
Note) Self-supported type package is also prepared.
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
VCBO
VCEO
ICBO
ICEO
IEBO
hFE1 *
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
IC = −1 mA, IE = 0
IC = −2 mA, IB = 0
VCB = −20 V, IE = 0
VCE = −10 V, IB = 0
VEB = −5 V, IC = 0
VCE = −5 V, IC = −1 A
VCE = −5 V, IC = −1 mA
IC = −1.5 A, IB = − 0.15 A
IC = −2 A, IB = − 0.2 A
VCE = −5 V, IC = − 0.5 A, f = 200 MHz
VCB = −20 V, IE = 0, f = 1 MHz
Min
50
40
80
10
Typ Max
1
100
10
220
1
1.5
150
45
Unit
V
V
µA
µA
µA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
hFE1
Q
80 to 160
R
120 to 220
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2003
SJD00035AED
1

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