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PDF TAN350 Data sheet ( Hoja de datos )

Número de pieza TAN350
Descripción high power COMMON BASE bipolar transistor
Fabricantes Advanced Power Technology 
Logotipo Advanced Power Technology Logotipo



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No Preview Available ! TAN350 Hoja de datos, Descripción, Manual

TAN 350
350 Watts, 50 Volts, Pulsed
Avionics 960 – 1215 MHz
GENERAL DESCRIPTION
The TAN350 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 960-1215 MHz. The device
has gold thin-film metallization and diffused ballasting for proven highest
MTTF. The transistor includes input and output prematch for broadband
capability. Low thermal resistance package reduces junction temperature,
extends life.
CASE OUTLINE
55ST Style 1
www.DataShAeeBt4SUO.coLmUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation @25°C (Pd)
1450 W (At rated pulse condition)
Voltage and Current
Collector to Base Voltage (BVces)
Emitter to Base Voltage (BVebo)
Collector Current (Ic)
65 V
2.0 V
40 A
Temperatures
Storage Temperature
-65 to +200 °C
Operating Junction Temperature +230 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
Pout
Pin
Pg
ηc
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
TEST CONDITIONS
F = 960 – 1215 MHz
VCC = 50 Volts
PW = 10 µsec
DF = 10%
F = 1090 MHz
FUNCTIONAL CHARACTERISTICS @ 25°C
BVebo
BVces
hFE
θjc2
Emitter to Base Breakdown
Collector to Emitter
Breakdown
DC – Current Gain
Thermal Resistance
Ie = 25 mA
Ic = 50 mA
Ic = 1A, Vce = 5V
MIN TYP MAX UNITS
350
7.0 7.5
38 40
3:1
70
W
W
dB
%
2.0
65
10
.12
V
V
°C/W
Rev A - Sept. 2005
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.

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