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Número de pieza | IPB04CN10NG | |
Descripción | Power-Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
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IPB04CN10N G IPI04CN10N G
IPP04CN10N G
OptiMOS®2 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
V DS
R DS(on),max (TO 263)
ID
100 V
3.9 m:
100 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPB04CN10N G
IPI04CN10N G
IPP04CN10N G
Package
Marking
PG-TO263-3
04CN10N
PG-TO262-3
04CN10N
PG-TO220-3
04CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse
Gate source voltage 4)
E AS
V GS
I D=100 A, R GS=25 :
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
100
100
400
1000
±20
300
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.2
page 1
2007-08-29
1 page www.DataSheet4U.com
1 Power dissipation
P tot=f(T C)
IPB04CN10N G IPI04CN10N G
IPP04CN10N G
2 Drain current
I D=f(T C); V GS10 V
350 120
300
100
250
80
200
60
150
40
100
20
50
0
0 50 100 150
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
103
limited by on-state
resistance
1 μs
100 μs
10 μs
10 ms 1 ms
102
DC
101
0
200 0
50 100 150
T C [°C]
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
100
0.5
10-1 0.2
0.1
0.05
0.02
0.01
10-2
single pulse
200
100
10-1
Rev. 1.2
100 101 102
V DS [V]
10-3
103
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 5
2007-08-29
5 Page www.DataSheet4U.com
IPB04CN10N G IPI04CN10N G
IPP04CN10N G
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Legal disclaimer
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support and/or
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
Rev. 1.2
page 11
2007-08-29
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet IPB04CN10NG.PDF ] |
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