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PDF IPB041N04NG Data sheet ( Hoja de datos )
| Número de pieza | IPB041N04NG | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPB041N04NG (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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Type
OptiMOS®3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
Product Summary
V DS
R DS(on),max
ID
Type
IPB041N04N G
IPP041N04N G
IPP041N04N G
IPB041N04N G
40 V
4.1 mΩ
80 A
Package
Marking
PG-TO263-3
041N04N
PG-TO220-3
041N04N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche current, single pulse3)
Avalanche energy, single pulse
Gate source voltage
1) J-STD20 and JESD22
ID
I D,pulse
I AS
E AS
V GS
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
T C=25 °C
T C=25 °C
I D=80 A, R GS=25 Ω
Value
80
80
400
80
60
±20
Unit
A
mJ
V
Rev. 1.0
page 1
2007-12-11
1 page  
www.DataSheet4U.com
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
300
10 V
250
200
150
100
50
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
300
IPP041N04N G
IPB041N04N G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
8
7 5.5 V
7V
6
6V
6.5 V
6.5 V
5
4
3
6V
5.5 V
5V
3
2
1
0
0 40 80 120
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
7V
10 V
160 200
120
250 100
200 80
150 60
100 40
50
0
0
Rev. 1.0
175 °C
25 °C
246
V GS [V]
20
0
80
page 5
20 40 60 80 100
I D [A]
2007-12-11
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IPB041N04NG.PDF ] | |
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