|
|
Número de pieza | IPB04N03LAG | |
Descripción | Power-Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPB04N03LAG (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! www.DataSheet4U.com
OptiMOS®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel - Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
• Pb-free lead plating; RoHS compliant
IPB04N03LA G
Product Summary
V DS
R DS(on),max (SMD version)
ID
25 V
3.9 mΩ
80 A
PG-TO263
Type
IPB04N03LA G
Package
PG-TO263
Marking
04N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C3)
Avalanche energy, single pulse
E AS I D=77 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=80 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1) J-STD20 and JESD22
Rev. 1.7
page 1
Value
80
80
385
290
6
±20
107
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2006-05-10
1 page www.DataSheet4U.com
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
140
10 V 4.5 V
120
100
IPB04N03LA G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
20
3V
3.2 V
3.5 V
3.8 V
4.1 V
4.1 V
15
80
60
40
20
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
160
3.8 V
10
3.5 V
3.2 V
3V
2.8 V
3
4.5 V
5
10 V
0
0 20 40 60 80 100 120 140
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
120
140
100
120
80
100
80 60
60
40
20 175 °C
25 °C
40
20
0
012345
V GS [V]
0
0
Rev. 1.7
page 5
20 40 60
I D [A]
80
2006-05-10
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IPB04N03LAG.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPB04N03LA | OptiMOS 2 Power-Transistor | Infineon Technologies AG |
IPB04N03LAG | Power-Transistor | Infineon Technologies |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |