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PDF IPP26CN10NG Data sheet ( Hoja de datos )

Número de pieza IPP26CN10NG
Descripción Power-Transistor
Fabricantes Infineon Technologies 
Logotipo Infineon Technologies Logotipo



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No Preview Available ! IPP26CN10NG Hoja de datos, Descripción, Manual

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IPB26CN10N G IPD25CN10N G
IPI26CN10N G IPP26CN10N G IPU25CN10N G
OptiMOS®2 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
V DS
R DS(on),max (TO252)
ID
100 V
25 m
35 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G
Package
Marking
PG-TO263-3
26CN10N
PG-TO252-3
25CN10N
PG-TO262-3
26CN10N
PG-TO220-3
26CN10N
PG-TO251-3
25CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=35 A, R GS=25
Reverse diode dv /dt
dv /dt
I D=35 A, V DS=80 V,
di /dt =100 A/µs,
T j,max=175 °C
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) see figure 3
3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V
Rev. 1.01
page 1
35
25
140
65
6
±20
71
-55 ... 175
55/175/56
A
mJ
kV/µs
V
W
°C
2006-06-02

1 page




IPP26CN10NG pdf
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5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
100
10 V
8V
7V
80
6.5 V
60
6V
40
5.5 V
20
5V
4.5 V
0
01234
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
80
60
40
175 °C
20 25 °C
0
0
Rev. 1.01
246
V GS [V]
IPB26CN10N G IPD25CN10N G
IPI26CN10N G IPP26CN10N G IPU25CN10N G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
60
5 V 5.5 V
6V
50
40
6.5 V
30
7V
8V
20 10 V
10
0
5 0 10 20 30 40 50 60 70
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
40
35
30
25
20
15
10
5
0
80
page 5
10 20
I D [A]
30
2006-06-02

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IPP26CN10NG arduino
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PG-TO252-3: Outline
IPB26CN10N G IPD25CN10N G
IPI26CN10N G IPP26CN10N G IPU25CN10N G
Rev. 1.01
page 11
2006-06-02

11 Page







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