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Datasheet IPI26CN10NG Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IPI26CN10NG | Power-Transistor
IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; R |  Infineon Technologies | transistor |
IPI Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IPI020N06N | Power Transistor Type
OptiMOSTM Power-Transistor
Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to Infineon Technologies transistor | | |
| 2 | IPI023NE7N3G | Power-Transistor "%&$!"#B< # : A 0<& <,9=4=>: <
6LHZ[XLY Q( @D9=9J54 D53 8>? 3 8B? >? ECB53 D9693 1D9? > Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 3 ? >F5BD5BC Q H3 5<<5>D71D5 3 81B75 H' 9H"[Z# @B? 4E3 D ( &
# <: /?.>% ?8 8 ,  Infineon transistor | | |
| 3 | IPI024N06N3G | Power-Transistor Ie\Q
"%&$!"#™3 Power-Transistor
Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3
B53
Q( @D9=9J54 D53 8>? F5BD5BC Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q. 5BI B5C9CD1>3 5 + 9H"[Z# Q' 3 81>>5< >? B=1<<5F5< Q
1F1<1>3 85 D5CD54 Q) 2 6 Infineon Technologies transistor | | |
| 4 | IPI029N06N | Power Transistor Type
OptiMOSTM Power-Transistor
Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to Infineon Technologies transistor | | |
| 5 | IPI030N10N3G | Power Transistor IPP030N10N3 G IPI030N10N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant • Q Infineon Technologies transistor | | |
| 6 | IPI032N06N3G | Power-Transistor Ie\Q
"%&$!"#™3 Power-Transistor
Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3
B53
Q( @D9=9J54 D53 8>? F5BD5BC Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q. 5BI B5C9CD1>3 5 + 9H"[Z# Q' 3 81>>5< >? B=1<<5F5< Q
1F1<1>3 85 D5CD54 Q) 2 6 Infineon Technologies transistor | | |
| 7 | IPI034NE7N3G | Power-Transistor "%&$!"#B< # : A 0<& <,9=4=>: <
6LHZ[XLY Q( @D9=9J54 D53 8>? 3 8B? >? ECB53 D9693 1D9? > Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 3 ? >F5BD5BC Q H3 5<<5>D71D5 3 81B75 H' 9H"[Z# @B? 4E3 D ( &
# <: /?.>% ?8 8 , Infineon transistor | |
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