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PDF IPP120N06NG Data sheet ( Hoja de datos )
| Número de pieza | IPP120N06NG | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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OptiMOS® Power-Transistor
Features
• For fast switching converters and sync. rectification
• N-channel enhancement - normal level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
IPB120N06N G
IPP120N06N G
Product Summary
V DS
R DS(on),max SMDversion
ID
60 V
11.7 mΩ
75 A
Type
IPP120N06N G
IPB120N06N G
Package
Marking
P-TO220-3-1
120N06N
P-TO263-3-2
120N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C1)
Avalanche energy, single pulse
E AS I D=75 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=75 A, V DS=48 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1) See figure 3
Rev. 1.11
page 1
Value
75
53
300
280
6
±20
158
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2006-07-05
1 page  
www.DataSheet4U.com
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
240
220
200
180
160
140
120
100
80
60
40
20
0
0
20 V
10 V
7V
6.5 V
6V
5.5 V
5V
1234
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
160
140
IPB120N06N G
IPP120N06N G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
30
5V
20 5.5 V
6.5 V
7V
10 V
10
20 V
0
5 0 20 40
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
60
80
80
120 60
100
80 40
60
40 20
20 175 °C 25 °C
0
01234567
V GS [V]
0
0 20 40 60 80
I D [A]
Rev. 1.11
page 5
2006-07-05
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IPP120N06NG.PDF ] | |
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