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PDF IPB14N03LAG Data sheet ( Hoja de datos )
| Número de pieza | IPB14N03LAG | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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OptiMOS®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel - Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
• Pb-free lead plating; RoHS compliant
IPB14N03LA G
Product Summary
V DS
R DS(on),max (SMD version)
ID
25 V
13.6 mΩ
30 A
PG-TO263-3-2
Type
IPB14N03LA G
Package
PG-TO263-3-2
Marking
14N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C3)
Avalanche energy, single pulse
E AS I D=24 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=30 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1) J-STD20 and JESD22
Rev. 1.7
page 1
Value
30
30
210
60
6
±20
46
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2006-05-11
1 page  
www.DataSheet4U.com
1 Power dissipation
P tot=f(T C)
50
2 Drain current
I D=f(T C); V GS≥10 V
40
IPB14N03LA G
40
30
30
20
20
10
10
0
0 50 100
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
1000
150
0
200 0 50 100 150
T C [°C]
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
10
200
100
limited by on-state
resistance
DC
10
1 µs
10 µs
100 µs
1 ms
10 ms
0.5
1
0.2
0.1
0.05
0.02
0.1
0.01
single pulse
1
0.1
Rev. 1.7
1 10
V DS [V]
0.01
100 010-6 100-5 100-4 10-30 10-20 10-1 0 100 1
t p [s]
page 5
2006-05-11
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IPB14N03LAG.PDF ] | |
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