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PDF P6NB50FP Data sheet ( Hoja de datos )

Número de pieza P6NB50FP
Descripción STP6NB50FP
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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STP6NB50
STP6NB50FP
N - CHANNEL ENHANCEMENT MODE
PowerMESHMOSFET
TYPE
V DSS
RDS(on)
ID
STP6NB50
STP6NB50FP
500 V
500 V
< 1.5
< 1.5
5.8 A
3.4 A
s TYPICAL RDS(on) = 1.35
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 k)
VGS Gat e-source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM ( )
Ptot
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
March 1998
Value
STP6NB50 STP6NB50FP
500
500
± 30
5.8 3.4
3.7 2.1
23.2
23.2
100 35
0.8 0.28
4.5 4.5
-- 2000
-65 to 150
150
(1) ISD 6A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
Uni t
V
V
V
A
A
A
W
W/oC
V/ ns
oC
oC
oC
1/9

1 page




P6NB50FP pdf
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Gate Charge vs Gate-source Voltage
Capacitance Variations
STP6NB50/FP
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9

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