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PDF 2SB601 Data sheet ( Hoja de datos )
| Número de pieza | 2SB601 | |
| Descripción | PNP SILICON EPITAXIAL TRANSISTOR | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
SILICON POWER TRANSISTOR
2SB601
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
FEATURES
• High-DC current gain due to Darlington connection
• Low collector saturation voltage
• Low collector cutoff current
• Ideal for use in direct drive from IC output for magnet drivers such
as treminal equipment or cash registers
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current
IC(DC)
Collector current
IC(pulse)*
Base current
IB(DC)
Total power dissipation
PT (Ta = 25°C)
Total power dissipation
PT (Tc = 25°C)
Junction temperature
Tj
Storage temperature
Tstg
* PW ≤ 10 ms, duty cycle ≤ 50%
Ratings
−100
−100
−7.0
+–5.0
+–8.0
−0.5
1.5
30
150
−55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
(/(&752'(
&211(&7,21
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16131EJ3V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928
1 page  
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[MEMO]
2SB601
Data Sheet D16131EJ3V0DS
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SB601.PDF ] | |
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