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PDF BF370R Data sheet ( Hoja de datos )
| Número de pieza | BF370R | |
| Descripción | NPN SILICON PLANAR TRANSISTOR | |
| Fabricantes | CDIL | |
| Logotipo |  |
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTOR
BF370R
TO-92
BEC
Low Level Amplifier Transistor.
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
VALUE
Collector -Base Voltage
VCBO
40
Collector -Emitter Voltage
VCEO
15
Emitter Base Voltage
VEBO
4.5
Collector Current (Continuous)
IC
100
Power Dissipation @ Ta=25 deg C
PD
500
Derate Above 25 deg C
4.0
Operating And Storage Junction
Tj, Tstg
-55 to +150
Temperature Range
Lead Temperature for Soldering 1/16" TL
260
from Body for 10 Seconds.
Thermal Resistance
Junction to Case
Rth (j-c)
83.3
Junction to Ambient
Rth (j-a)
200
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
Collector -Base Voltage
VCBO IC=100uA, IE=0
Collector -Emitter Voltage
VCEO IC=100uA, IB=0
Emitter Base Voltage
VEBO
IE=100uA, IC=0
Collector Cut off Current
ICBO
VCB=20V, IE=0
Ta=125 deg C
VCB=15V, IE=0
Emitter Cut off Current
IEBO
VEB=2V, IC=0
DC Current Gain
hFE IC=10mA,VCE=1V
DYNAMIC CHARACTERISTICS
Transistors frequency
ft IC=10mA,VCE=10V
IC=40mA,VCE=10V
Collector Capacitance
Cc VCB=10V, IE=0, f=1MHz
Emitter Capacitance
Ce VEB=1V, IC= Ic=0, f=1MHz
Feedback Capacitance
Cre IC=0, VCE=10V, f=1MHz
Interference Voltage for K=1%
GV V(int) RMS
MIN TYP
40 -
15 -
4.5 -
--
--
--
40 -
500 -
490
Typ 2.2
--
Typ 1.6
Typ 120
UNIT
V
V
V
mA
mW
mW/deg C
deg C
deg C
deg C/W
deg C/W
MAX
-
-
-
400
UNIT
V
V
V
nA
30 uA
100 nA
-
- MHz
- MHz
pF
4.5 pF
pF
mV
Continental Device India Limited
Data Sheet
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BF370R.PDF ] | |
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