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PDF RF3133 Data sheet ( Hoja de datos )

Número de pieza RF3133
Descripción QUAD-BAND GSM850/GSM/DCS/PCS POWER AMP MODULE
Fabricantes RF Monolithics 
Logotipo RF Monolithics Logotipo



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Typical Applications
• 3V Quad-Band GSM Handsets
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
RF3133
QUAD-BAND GSM850/GSM/DCS/PCS
POWER AMP MODULE
• GSM850, EGSM900, DCS/PCS Products
• GPRS Class 12 Compatible
Product Description
The RF3133 is a high-power, high-efficiency power ampli-
fier module with integrated power control. The device is
self-contained with 50input and output terminals. The
power control function is also incorporated, eliminating
the need for directional couplers, detector diodes, power
control ASICs and other power control circuitry; this
allows the module to be driven directly from the DAC out-
put. The device is designed for use as the final RF ampli-
fier in GSM850, EGSM900, DCS and PCS handheld
digital cellular equipment and other applications in the
824MHz to 849MHz, 880MHz to 915MHz, 1710MHz to
1785MHz, and 1850MHz to 1910MHz bands. On-board
power control provides over 37dB of control range with an
analog voltage input; and, power down with a logic “low”
for standby operation.
1
10.00
± 0.10
7.00
± 0.10
NOTES:
1 Shaded areas represent pin 1 location.
1.40
1.25
0.450
± 0.075
9.90 TYP
9.10 TYP
8.50
6.90 TYP
6.10 TYP
3.90 TYP
3.10 TYP
1.50
0.90 TYP
0.10 TYP
0.00
1
8.40 TYP
7.60 TYP
6.00
5.40 TYP
4.60 TYP
4.00
2.40 TYP
1.60 TYP
Optimum Technology Matching® Applied
Si BJT
!GaAs HBT
GaAs MESFET
Si Bi-CMOS
!SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
DCS IN 1
BAND SELECT 2
TX ENABLE 3
VBATT 4
VREG 5
VRAMP 6
GSM IN 7
12
8
11 DCS OUT
10 VCC OUT
9 GSM OUT
Functional Block Diagram
Package Style: Module
Features
• Complete Power Control Solution
• Single 2.9V to 5.5V Supply Voltage
• +35dBm GSM Output Power at 3.5V
• +33dBm DCS/PCS Output Power at 3.5V
• 55% GSM and 52% DCS/PCS ηEFF
Ordering Information
RF3133
RF3133 PCBA
Quad-Band GSM850/GSM/DCS/PCS Power Amp
Module
Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A4 030527
2-459

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RF3133
Parameter
Overall (DCS/PCS Mode)
Operating Frequency Range
Maximum Output Power
Total Efficiency
Input Power Range
Output Noise Power
Specification
Min.
Typ.
Max.
+32.0
+31.7
+31.0
+29.5
45
44
0
1710 to 1910
+34.0
+32.7
+31.8
+30.5
50
48
+2
+5
-77
Forward Isolation 1
Forward Isolation 2
Second Harmonic
Third Harmonic
All other Non-Harmonic Spurious
Input Impedance
Input VSWR
Output Load VSWR Stability
8:1
Output Load VSWR Ruggedness 10:1
-37
-25
-30
50
-
-30
-1
-5
-15
-36
2.5
Output Load Impedance
Note: VRAMP Max=3/8*VBATT+0.18<1.5V
50
Unit
MHz
dBm
dBm
dBm
dBm
%
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Condition
Temp=25°C, VBATT=3.5V, PIN=+2dBm,
VREG=2.8V, VRAMP =VRAMP Max,
Freq=1710MHz to 1910MHz,
25% Duty Cycle, Pulse Width=1154µs
Temp=+25°C, VBATT=3.5V, VRAMP =VRAMP
Max, 1710MHz to 1785MHz
1850MHz to 1910MHz
Temp=+85°C, VBATT=3.0V,
VRAMP = VRAMP Max, 1710MHz to 1785MHz
1850MHz to 1910MHz
At POUT,MAX, VBATT=3.5V, 1710-1785MHz
1850MHz to 1910MHz
RBW=100kHz, 1805MHz to 1880MHz and
1930MHz to 1990MHz, POUT > 5dBm,
VBATT = 3.5 V
TX_ENABLE=0V, PIN=+5dBm
TX_ENABLE=High, PIN=+5dBm,
VRAMP = 0.2 V
VRAMP=0.2V to VRAMP MAX
VRAMP=0.2V to VRAMP MAX
VRAMP=0.2V to VRAMP MAX
VRAMP=0.2V to VRAMP MAX
Spurious<-36dBm, RBW=3MHz, Set VRAMP
where POUT <32.0dBm into 50load
Set VRAMP where POUT <32.0dBm into 50
load. No damage or permanent degradation
to part.
Load impedance presented at RF OUT pin
Rev A4 030527
2-463

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RF3133
Talk time and power management are key concerns in transmitter design since the power amplifier has the highest cur-
rent draw in a mobile terminal. Considering only the power amplifier’s efficiency does not provide a true picture for the
total system efficiency. It is important to consider effective efficiency which is represented by ηEFF. EFF considers the
loss between the PA and antenna and is a more accurate measurement to determine how much current will be drawn in
the application). ηEFF is defined by the following relationship (Equation 2):
m
PN PIN
ηEFF
=
n----=-----1-----------------------
PDC
100
(Eq. 2)
Where PN is the sum of all positive and negative RF power, PIN the input power and PDC is the delivered DC power. In dB
the formula becomes (Equation 3):
P----P---A----+-----P----L---O---S---S
-P---I--N-
ηEFF
=
1---0-------------1---0-------------–-----1---0----1--0--
VBAT IBAT 10
(Eq. 3)
Where PPA is the output power from the PA, PLOSS the insertion loss, PIN the input power to the PA and PDC the deliv-
ered DC power.
The RF3133 improves the effective efficiency by minimizing the PLOSS term in the equation. A directional coupler may
introduce 0.4dB to 0.5dB loss to the transit path. To demonstrate the improvement in effective efficiency consider the fol-
lowing example:
Conventional PA Solution:
PPA = +33 dBm
PIN = +2 dBm
PLOSS = -0.4 dB
VBAT = 3.5 V
IBAT = 1.1 A
ηEFF = 47.2%
RF3133 Solution:
PPA = +33 dBm
PIN = +2 dBm
PLOSS = 0 dB
VBAT = 3.5 V
IBAT = 1.1 A
ηEFF = 51.72%
The RF3133 solution improves effective efficiency 5%.
Output power does not vary due to supply voltage under normal operating conditions if VRAMP is sufficiently lower than
VBATT. By regulating the collector voltage to the PA the voltage sensitivity is essentially eliminated. This covers most
cases where the PA will be operated. However, as the battery discharges and approaches its lower power range the
maximum output power from the PA will also drop slightly. In this case it is important to also decrease VRAMP to prevent
the power control from inducing switching transients. These transients occur as a result of the control loop slowing down
and not regulating power in accordance with VRAMP.
Rev A4 030527
2-469

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