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Número de pieza | SDP04S60 | |
Descripción | Silicon Carbide Schottky Diode | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SDP04S60 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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Final data
SDP04S60, SDD04S60
SDT04S60
Silicon Carbide Schottky Diode
• Worlds first 600V Schottky diode
• Revolutionary semiconductor
material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
the switching behavior
• Ideal diode for Power Factor
Correction up to 800W 1)
• No forward recovery
P-TO220-2-2.
Product Summary
VRRM
600
Qc 13
IF 4
V
nC
A
P-TO252-3-1.
P-TO220-3-1.
Type
SDP04S60
SDD04S60
SDT04S60
Package
P-TO220-3-1.
P-TO252-3-1.
P-TO220-2-2.
Ordering Code
Q67040-S4369
Q67040-S4368
Q67040-S4445
Marking
D04S60
D04S60
D04S60
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous forward current, TC=100°C
RMS forward current, f=50Hz
IF
IFRMS
Surge non repetitive forward current, sine halfwave IFSM
TC=25°C, tp=10ms
Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
IFRM
IFMAX
tp=10µs, TC=25°C
i 2t value, TC=25°C, tp=10ms
Repetitive peak reverse voltage
∫i2dt
VRRM
Surge peak reverse voltage
Power dissipation, TC=25°C
Operating and storage temperature
VRSM
Ptot
Tj , Tstg
Pin 1
n.c.
n.c.
C
PIN 2
C
A
A
Value
4
5.6
12.5
18
40
0.78
600
600
36.5
-55... +175
PIN 3
A
C
Unit
A
A²s
V
W
°C
Page 1
2004-02-11
1 page www.DataSheet4U.com
Final data
SDP04S60, SDD04S60
SDT04S60
5 Typ. reverse current vs. reverse voltage
IR=f(VR)
10 2
µA
6 Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 1 SDP04S60
K/W
10 1
10 0
10 0
10 -1
10 -2
25°C
100°C
125°C
150°C
10 -1
10 -2
10 -3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -3
100
200
300 400
V 600
VR
7 Typ. capacitance vs. reverse voltage
C= f(VR)
parameter: TC = 25 °C, f = 1 MHz
125
10
-4
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
8 Typ. C stored energy
EC=f(VR)
s 10 0
tp
2
µJ
pF
1.6
1.4
75 1.2
1
50 0.8
0.6
25 0.4
0.2
010 0 10 1 10 2 V 10 3
VR
00 100 200 300 400 V 600
VR
Page 5
2004-02-11
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet SDP04S60.PDF ] |
Número de pieza | Descripción | Fabricantes |
SDP04S60 | Silicon Carbide Schottky Diode | Infineon Technologies |
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