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PDF FSDH321 Data sheet ( Hoja de datos )

Número de pieza FSDH321
Descripción (FSDH321 / FSDL321) Green Mode Fairchild Power Switch
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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www.fairchildsemi.com
FSDH321, FSDL321
Green Mode Fairchild Power Switch (FPSTM)
Features
• Internal Avalanche Rugged Sense FET
• Consumes only 0.65W at 240VAC & 0.3W load with
Advanced Burst-Mode Operation
• Frequency Modulation for EMI Reduction
• Precision Fixed Operating Frequency
• Internal Start-up Circuit
• Pulse-by-Pulse Current Limiting
• Abnormal Over Current Protection (AOCP)
• Over Voltage Protection (OVP)
• Over Load Protection (OLP)
• Internal Thermal Shutdown Function (TSD)
• Auto-Restart Mode
• Under Voltage Lockout (UVLO)
• Low Operating Current (max 3mA)
• Adjustable Peak Current Limit
• Built-in Soft Start
Applications
• SMPS for STB, Low cost DVD Player
• Auxiliary Power for PC
• Adapter & Charger
Related Application Notes
• AN-4137, 4141, 4147(Flyback) / AN-4134(Forward)
Description
Each product in the FSDx321 (x for H, L) family consists of
an integrated Pulse Width Modulator (PWM) and Sense
FET, and is specifically designed for high performance off-
line Switch Mode Power Supplies (SMPS) with minimal
external components. Both devices are integrated high volt-
age power switching regulators which combine an avalanche
rugged Sense FET with a current mode PWM control block.
The integrated PWM controller features include: a fixed
oscillator with frequency modulation for reduced EMI,
Under Voltage Lock Out (UVLO) protection, Leading Edge
Blanking (LEB), an optimized gate turn-on/turn-off driver,
Thermal Shut Down (TSD) protection, Abnormal Over Cur-
rent Protection (AOCP) and temperature compensated preci-
sion current sources for loop compensation and fault
protection circuitry. When compared to a discrete MOSFET
and controller or RCC switching converter solution, the
FSDx321 devices reduce total component count, design size,
weight while increasing efficiency, productivity and system
reliability. Both devices provide a basic platform that is well
suited for the design of cost-effective flyback converters.
FPSTM is a trademark of Fairchild Semiconductor Corporation.
©2005 Fairchild Semiconductor Corporation
OUTPUT POWER TABLE
230VAC ±15%(3)
85-265VAC
PRODUCT
Adapt- Open Adapt- Open
er(1) Frame(2) er(1) Frame(2)
FSDL321
11W
17W
8W
12W
FSDH321
11W
17W
8W
12W
FSDL0165RN 13W
23W
11W
17W
FSDM0265RN 16W
27W
13W
20W
FSDH0265RN 16W
27W
13W
20W
FSDL0365RN 19W
30W
16W
24W
FSDM0365RN 19W
30W
16W
24W
FSDL321L
11W
17W
8W
12W
FSDH321L
11W
17W
8W
12W
FSDL0165RL 13W
23W
11W
17W
FSDM0265RL 16W
27W
13W
20W
FSDH0265RL 16W
27W
13W
20W
FSDL0365RL 19W
30W
16W
24W
FSDM0365RL 19W
30W
16W
24W
Notes:
1. Typical continuous power in a non-ventilated enclosed
adapter with sufficient drain pattern as a heat sinker, at
50°C ambient.
2. Maximum practical continuous power in an open frame
design with sufficient drain pattern as a heat sinker, at 50°C
ambient.
3. 230 VAC or 100/115 VAC with doubler.
Typical Circuit
AC
IN
Vstr Drain
Ipk
PWM
Vfb Vcc Source
DC
OUT
Figure 1. Typical Flyback Application
Rev.1.0.5

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FSDH321 pdf
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FSDH321, FSDL321
Electrical Characteristics
(Ta = 25°C unless otherwise specified)
Parameter
Symbol
Condition
SENSE FET SECTION
Zero-Gate-Voltage Drain Current
IDSS
VDS=650V, VGS=0V
VDS=520V, VGS=0V, TC=125°C
Drain-Source On-State Resistance
Forward Trans-Conductance(1)
RDS(ON) VGS=10V, ID=0.5A
gfs VDS=50V, ID=0.5A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V,
f=1MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDS=325V, ID=1.0A
Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain (Miller) Charge
Qg
Qgs
Qgd
VGS=10V, ID=1.0A,
VDS=325V
CONTROL SECTION
Switching Frequency
Switching Frequency Modulation
fOSC
fMOD
FSDH321
Switching Frequency
Switching Frequency Modulation
Switching Frequency Variation(2)
fOSC
fMOD
fOSC
FSDL321
-25°C Ta 85°C
Maximum Duty Cycle
DMAX
FSDH321
FSDL321
UVLO Threshold Voltage
VSTART
VSTOP
VFB=GND
VFB=GND
Feedback Source Current
IFB VFB=GND
Internal Soft Start Time
tS/S VFB=4V
BURST MODE SECTION
Burst Mode Voltage
VBURH
VBURL
Tj=25°C
VBUR(HYS) Hysteresis
PROTECTION SECTION
Peak Current Limit
Current Limit Delay Time(3)
Thermal Shutdown Temperature(3)
ILIM
tCLD
TSD
Tj=25°C, i/t=250mA/us
Tj=25°C
Shutdown Feedback Voltage
VSD
Over Voltage Protection
VOVP
Shutdown Delay Current
IDELAY VFB=4V
Leading Edge Blanking Time
tLEB
TOTAL DEVICE SECTION
Operating Supply Current (control part only)
IOP
VCC=14V, VFB=0V
Start-Up Charging Current
ICH VCC=0V
Vstr Supply Voltage
VSTR VCC=0V
Min.
-
-
-
1.0
-
-
-
-
-
-
-
-
-
-
90
±2.5
45
±1.0
-
62
71
11
7
0.7
10
0.4
0.25
-
0.60
-
125
5.5
18
3.5
200
1
0.7
35
Typ.
-
-
14
1.3
162
18
3.8
9.5
19
33
42
7.0
3.1
0.4
100
±3.0
50
±1.5
±5
67
77
12
8
0.9
15
0.5
0.35
150
0.70
600
145
6.0
19
5.0
-
3
0.85
-
Max.
25
200
19
-
-
-
-
-
-
-
-
-
-
-
110
±3.5
55
±2.0
±10
72
83
13
9
1.1
20
0.6
0.45
-
0.80
-
-
6.5
20
6.5
-
5
1.0
-
Unit
µA
S
pF
ns
nC
KHz
KHz
KHz
KHz
%
%
%
V
V
mA
ms
V
V
mV
A
ns
°C
V
V
µA
ns
mA
mA
V
Note:
1. Pulse test: Pulse width 300us, duty 2%
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
3. These parameters, although guaranteed, are not 100% tested in production
5

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FSDH321, FSDL321
5. Soft Start : The FPS has an internal soft start circuit that
slowly increases the feedback voltage together with the
Sense FET current after it starts up. The typical soft start
time is 15msec, as shown in Figure 8, where progressive
increments of the Sense FET current are allowed during the
start-up phase. The pulse width to the power switching
device is progressively increased to establish the correct
working conditions for transformers, inductors, and capaci-
tors. The voltage on the output capacitors is progressively
increased with the intention of smoothly establishing the
required output voltage. It also helps to prevent transformer
saturation and reduce the stress on the secondary diode.
Drain current
0.7A
1ms
0.4A
15steps
Current limit
Figure 8. Soft Start Function
t
VFB
VBURH
VBURL
Current
Waveform
Burst
Operation
Burst
Operation
Normal
Operation
Switching
OFF
Switching
OFF
Vfb
3
VBURH
+
-
VBURL/VBURH
Vcc
IDELAY
Vcc
IFB
Vcc
IBUR(pk)
Normal
2.5R
R
Burst
PWM
MOSFET
Current
Figure 9. Burst Operation Function
6. Burst Operation : In order to minimize power dissipation
in standby mode, the FPS enters burst mode operation. As
the load decreases, the feedback voltage decreases. As
shown in Figure 9, the device automatically enters burst
mode when the feedback voltage drops below
VBURH(500mV). Switching still continues but the current
limit is set to a fixed limit internally to minimize flux density
in the transformer. The fixed current limit is larger than that
defined by VFB = VBURH and therefore, VFB is driven
down further. Switching continues until the feedback voltage
drops below VBURL(350mV). At this point switching stops
and the output voltages start to drop at a rate dependent on
the standby current load. This causes the feedback voltage to
rise. Once it passes VBURH(500mV), switching resumes.
The feedback voltage then falls and the process repeats.
Burst mode operation alternately enables and disables
switching of the power Sense FET thereby reducing switch-
ing loss in Standby mode.
7. Frequency Modulation : Modulating the switching fre-
quency of a switched power supply can reduce EMI. Fre-
quency modulation can reduce EMI by spreading the energy
over a wider frequency range than the bandwidth measured
by the EMI test equipment. The amount of EMI reduction is
directly related to the depth of the reference frequency. As
can be seen in Figure 10, the frequency changes from 97KHz
to 103KHz in 4ms for the FSDH321 (48.5KHz to 51.5KHz
for FSDL321). Frequency modulation allows the use of a
cost effective inductor instead of an AC input mode choke to
satisfy the requirements of world wide EMI limits.
fs=1/ts
103kHz
100kHz
97kHz
Drain
Current
ts
4ms t
Figure 10. Frequency Modulation Waveform
11

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