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PDF NDS7002A Data sheet ( Hoja de datos )
| Número de pieza | NDS7002A | |
| Descripción | (NDS7000A / NDS7002A) N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | National Semiconductor | |
| Logotipo |  |
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www.DataSheet4U.com
March 1993
2N7000 2N7002 NDF7000A NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
General Description
These n-channel enhancement mode field effect transistors
are produced using National’s very high cell density third
generation DMOS technology These products have been
designed to minimize on-state resistance provide rugged
and reliable performance and fast switching They can be
used with a minimum of effort in most applications requir-
ing up to 400 mA DC and can deliver pulsed currents up to
2A This product is particularly suited to low voltage low
current applications such as small servo motor controls
power MOSFET gate drivers and other switching applica-
tions
Features
Y Efficient high density cell design approaching
(3 million in2)
Y Voltage controlled small signal switch
Y Rugged
Y High saturation current
Y Low RDS (ON)
TL G 11378 – 2
TL G 11378–1
TO-92
7000 Series
TO-236 AB
(SOT-23)
7002 Series
TL G 11378 – 3
Absolute Maximum Ratings
Symbol
VDSS
VDGR
VGSS
ID
PD
TJ TSTG
TL
Parameter
Drain-Source Voltage
Drain-Gate Voltage (RGS s 1 MX)
Gate-Source Voltage
Drain Current Continuous
Pulsed
Total Power Dissipation TA e 25 C
Derating above 25 C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes
from Case for 10 Seconds
2N7000 2N7002
200 115
500 800
400 200
32 16
b55 to 150
NDF7000A NDS7002A
60
60
g40
400 280
2000
1500
625 300
5 24
b65 to 150
300
Units
V
V
V
mA
mA
mW
mW C
C
C
C1995 National Semiconductor Corporation TL G 11378
RRD-B30M115 Printed in U S A
1 page  
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NDS7002A
Electrical Characteristics TC e 25 C unless otherwise noted
Symbol
Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Forward
IGSSR
Gate-Body Leakage Reverse
ON CHARACTERISTICS
VGS e 0V ID e 10 mA
VDS e 60V VGS e 0V
VGS e 20V
VGS e b20V
TC e 125 C
VGS(th)
rDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS(ON) Drain-Source On-Voltage
ID(ON)
On-State Drain Current
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
VDS e VGS ID e250 mA
VGS e 10V ID e 0 5A
TC e 125 C
VGS e 5V ID e 50 mA
TC e 125 C
VGS e 10V ID e 500 mA
VGS e 5 0V ID e 50 mA
VGS e 10V VDS t 2 VDS(ON)
VDS t 2 VDS(ON) ID e 200 mA
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
VDS e 25V VGS e 0V f e 1 0 MHz
tON Turn-On Time
tOFF
Turn-Off Time
BODY-DRAIN DIODE RATINGS
VDD e 30V ID e 200 mA VGS e 10V
RG e 25X RL e 150X
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS e 0V IS e 400 mA
THERMAL CHARACTERISTICS
RiJA
Thermal Resistance Junction to Ambient
Pulse Test Pulse Width s 300 ms Duty Cycle s 2 0%
Min Typ Max Units
60 V
1 mA
500 mA
100 nA
b100 nA
1 21
12
2
17
28
06
0 09
500 2700
80 320
25
2
35
3
5
1
0 15
V
X
X
X
X
V
V
mA
ms
20 50 pF
11 25 pF
4 5 pF
20 ns
20 ns
280
1500
0 88 1 2
mA
mA
V
417 C W
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NDS7002A.PDF ] | |
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