DataSheet.es    


PDF K3528 Data sheet ( Hoja de datos )

Número de pieza K3528
Descripción MOSFET ( Transistor ) - 2SK3528
Fabricantes Fuji Electric 
Logotipo Fuji Electric Logotipo



Hay una vista previa y un enlace de descarga de K3528 (archivo pdf) en la parte inferior de esta página.


Total 4 Páginas

No Preview Available ! K3528 Hoja de datos, Descripción, Manual

2SK3528-01Rwww.DataSheet4U.com
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
TO-3PF
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
600 V
VDSX *5
600 V
Continuous drain current
ID
±17 A
Pulsed drain current
ID(puls]
±68 A
Gate-source voltage
VGS
±30 V
Repetitive or non-repetitive
IAR *2
17 A
Maximum Avalanche Energy
EAS
*1
412
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20 kV/µs
Peak Diode Recovery dV/dt
dV/dt *3
5 kV/µs
Max. power dissipation
PD Ta=25°C
Tc=25°C
3.125
120
W
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
Isolation Voltage
VISO *6
2 kVrms
*1 L=2.62mH, Vcc=60V *2 Tch<=150°C *3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C
*4 VDS<= 600V *5 VGS=-30V *6 t=60sec f=60Hz
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=600V VGS=0V
VDS=480V VGS=0V
VGS=±30V VDS=0V
ID=8.5A VGS=10V
Tch=25°C
Tch=125°C
ID=8.5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=8.5A
VGS=10V
RGS=10
VCC=300V
ID=17A
VGS=10V
L=2.62mH Tch=25°C
IF=17A VGS=0V Tch=25°C
IF=17A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
600 V
3.0 5.0 V
25 µA
250
10 100
nA
0.29 0.37
10 20
S
2280 3420
pF
290 435
16 24
26 39 ns
37 56
78 117
13 19
54 81 nC
15 23
20 30
17 A
0.93 1.50 V
0.7 µs
10.0
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
1.042 °C/W
40.0 °C/W
1

1 page





PáginasTotal 4 Páginas
PDF Descargar[ Datasheet K3528.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
K3520-01MRMOSFET ( Transistor ) - 2SK3520-01MRFuji Electric
Fuji Electric
K3520PQ-XHCommon-Drain Dual N-Channel Enhancement Mode Field Effect TransistorKEC
KEC
K3524-01MOSFET ( Transistor ) - 2SK3524-01Fuji Electric
Fuji Electric
K3525-01MRMOSFET ( Transistor ) - 2SK3525-01MRFuji Electric
Fuji Electric

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar