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Número de pieza | 2SC5574 | |
Descripción | Power Transistor | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SC5574 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
No Preview Available ! Transistors
Power Transistor (80V, 4A)
2SC5574
2SC5574
!Features
1) Low saturation voltage.
(Typ. VCE(sat) = 0.3V at IC / IB =2 / 0.2A)
2) Excellent DC current gain characteristics.
3) Pc = 30W (Tc = 25°C)
4) Wide SOA (safe operating area).
5) Complements the 2SA2017.
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse, Pw=100ms
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
100
80
6
4
6
2
30
150
−55 ∼ +150
Unit
V
V
V
A(DC)
A(Pulse) *
W
W(Tc=25°C)
°C
°C
!External dimensions (Units : mm)
10.0
φ 3.2
4.5
2.8
1.2 1.3
0.8
2.54
2.54
(1) (2) (3)
(1) (2) (3)
ROHM : TO-220FN
0.75 2.6
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
!Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SC5574
TO-220FN
EFG
−
500
!Electrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Measured using pulse current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
Min.
100
80
6
−
−
−
−
100
−
−
Typ.
−
−
−
−
−
−
−
−
10
60
Max.
−
−
−
10
10
1
1.5
500
−
−
Unit
V
V
V
µA
µA
V
V
−
MHz
pF
Conditions
IC = 50µA
IC = 25mA
IE = 50µA
VCB = 100V
VEB = 6V
IC/IB = 2A/0.2A
IC/IB = 2A/0.2A
VCE/IC = 4V/1A
VCE = 12V , IE = −0.2A , f = 5MHz
VCB = 10V , IE = 0A , f = 1MHz
∗
∗
∗
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet 2SC5574.PDF ] |
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