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PDF P4N60 Data sheet ( Hoja de datos )

Número de pieza P4N60
Descripción SSP4N60
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! P4N60 Hoja de datos, Descripción, Manual

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Advanced Power MOSFET
SSP4N60AS
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V
Lower RDS(ON) : 2.037 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC)
Continuous Drain Current (TC=100oC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O2
Avalanche Current
O1
Repetitive Avalanche Energy
O1
Peak Diode Recovery dv/dt
O3
Total Power Dissipation (TC=25 oC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
Thermal Resistance
Symbol
R θJC
R θCS
R θJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
BVDSS = 600 V
RDS(on) = 2.5
ID = 4 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
600
4
2.5
16
+_ 30
262
4
10
3.0
100
0.8
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/oC
oC
Typ.
--
0.5
--
Max.
1.25
--
62.5
Units
oC/W
Rev. B
©1999 Fairchild Semiconductor Corporation

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P4N60 pdf
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N-CHANNEL
POWER MOSFET
SSP4N60AS
Fig 12. Gate Charge Test Circuit & Waveform
“ Current Regulator ”
50K
12V 200nF
300nF
VGS
Same Type
as DUT
VGS
10V
VDS
Qgs
DUT
3mA
R1 R2
Current Sampling (IG) Current Sampling (ID)
Resistor
Resistor
Qg
Qgd
Charge
10V
Vout
Vin
RG
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDD
( 0.5 rated VDS )
Vout
90%
DUT
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
Vary tp to obtain
required peak ID
VDS
LL
ID
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
10V
RG
tp
DUT
C
VDD
VDD
ID (t)
tp
VDS (t)
Time

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