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PDF ILB03N60 Data sheet ( Hoja de datos )
| Número de pieza | ILB03N60 | |
| Descripción | LightMOS Power Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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ILA03N60, ILP03N60
ILB03N60, ILD03N60
LightMOS Power Transistor
• New high voltage technology designed for ZVS-switching in lamp
ballasts
• IGBT with integrated reverse diode
• 4A current rating for reverse diode
• Up to 10 times lower gate capacitance than MOSFET
• Avalanche rated
• 150°C operating temperature
• FullPak isolates 2.5 kV AC (1 min.)
P-TO-220-3-1
(TO-220AB)
C
G P-TO-220-3-31
E (TO-220 FullPak)
P-TO-263-3-2 (D2-PAK)
(TO-263AB)
P-TO-252-3-1 (D-PAK)
(TO-252AA)
Type
ILA03N60
VCE
600V
ILP03N60
600V
ILB03N60
600V
ILD03N60
600V
Maximum Ratings
IC
3.0A
3.0A
3.0A
3.0A
VCE(sat),Tj=25°C
2.9V
2.9V
2.9V
2.9V
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax, tp < 10 ms
Pulsed collector current, tp limited by Tjmax
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax, tp < 10 ms
Diode pulsed current, tp limited by Tjmax
Avalanche energy, single pulse
IC=0.4A, VCE=50V
Gate-emitter voltage
Reverse diode dv/dt
IC ≤ 3A, VCE ≤ 450V, Tjmax ≤ 150°C
Power dissipation (TC = 25°C)
Operating junction and storage temperature
Soldering temperature
for 10 s (according to JEDEC J-STA-020A)
Tj,max
150°C
150°C
150°C
150°C
Package
Ordering Code
P-TO-220-3-31 Q67040-S4626
P-TO-220-3-1 Q67040-S4628
P-TO-263-3-2 Q67040-S4627
P-TO-252-3-1 Q67040-S4625
Symbol
VCE
IC
ICpuls
IF
IFpuls
EAS
Value
ILA03N60 Others
600
3 4.5
2.2 3
9
5.5
44
2.2 2.5
9
5.5
0.32
VGE
dv/dt
±30
11
Unit
V
A
mJ
V
V/ns
P t o t 16.5 27 W
Tstg
-55...+150
°C
T s D-Pak 255
Others 220
1 Reverse diode of transistor is commutated with same device according to figure C. With application
relevant values IC ≤ 1.5A, CSnubber = 1 nF and RG ≥ 50Ω, dv/dt of the reverse diode is within its specification.
Power Semiconductors
1
Rev. 1.2 Apr-04
1 page  
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ILA03N60, ILP03N60
ILB03N60, ILD03N60
10A
1A
0,1A
tp=4µs
8µs
15µs
50µs
200µs
1ms
DC
0,01A
1V
10V 100V
f, SWITCHING FREQUENCY
Figure 1:
(FullPak)
Safe operating area
(D = 0, TC = 25°C, Tj ≤ 150°C)
1000V
30W
25W
Other Packages
20W
15W
10W FullPak
5W
0W
25°C 50°C 75°C 100°C 125°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj ≤ 150°C)
10A
1A
0,1A
tp=4µs
8µs
15µs
50µs
200µs
1ms
DC
0,01A
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2:
Safe operating area
(Other Packages)
(D = 0, TC = 25°C, Tj ≤ 150°C)
6A
4A Other Packages
Fullpak
2A
0A
25°C 50°C 75°C 100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≤ 10V, Tj ≤ 150°C)
Power Semiconductors
5
Rev. 1.2 Apr-04
5 Page 
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ILA03N60, ILP03N60
ILB03N60, ILD03N60
90 % VGE
VC E
90 % V CE
10% V GE
9 0% VCE
t
I,v
I
F
10% V CE
td(off)
tf
t td(on)
r
F igure A. Definition of switching times
10 % V CE
½ Lσ
t
dI /dt
F
Irrm
tr r=tS+ tF
Qrr =QS+QF
trr
tt
SF
QS QF
10% Irrm
t
dIrr /dt
90% Irrm
VR
D.U.T
(Diode)
U
RG
½ Lσ
D.U.T
(IGBT)
Cσ
Figure B . Definition of diodes switching characteristics
Figure C. Dynamic tes t circuit
Power Semiconductors
11
Rev. 1.2 Apr-04
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet ILB03N60.PDF ] | |
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