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Número de pieza | T2500BFP | |
Descripción | ISOLATED TRIACs THYRISTORS | |
Fabricantes | Motorola Semiconductors | |
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www.DatSaSEheMetI4CU.OcoNm DUCTOR TECHNICAL DATA
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by T2500FP/D
Silicon Bidirectional
Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and
Stability
• Small, Rugged, Isolated Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
T2500FP
Series
ISOLATED TRIACs
THYRISTORS
6 AMPERES RMS
200 thru 800 VOLTS
MT2 MT1 CASE 221C-02
G STYLE 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Repetitive Peak Off-State Voltage(1)
(TJ = –40 to +100°C, Gate Open)
T2500BFP
T2500DFP
T2500MFP
T2500NFP
On-State RMS Current (TC = +80°C)(2)
(Full Cycle Sine Wave 50 to 60 Hz)
Symbol
VDRM
IT(RMS)
Value
200
400
600
800
6
Unit
Volts
Amps
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TC = +80°C)
Circuit Fusing Considerations
(t = 8.3 ms)
ITSM 60 Amps
I2t 40 A2s
Peak Gate Power
(TC = +80°C, Pulse Width = 1 µs)
Average Gate Power
(TC = +80°C, t = 8.3 ms)
Peak Gate Trigger Current (Pulse Width = 10 µs)
pRMS Isolation Voltage (TA = 25°C, Relative Humidity 20%)
Operating Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
PGM
PG(AV)
IGTM
VISO
TJ
Tstg
1
0.2
4
1500
–40 to +100
–40 to +150
Watt
Watt
Amps
Volts
°C
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case(2)
Case to Sink
Junction to Ambient
RθJC
RθCS
RθJA
2.7
2.2(typ)
60
°C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic
body.
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet T2500BFP.PDF ] |
Número de pieza | Descripción | Fabricantes |
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