(PDF) NE56787 Datasheet - NPN SILICON HI FREQUNCY TRANSISTOR

Número de pieza	NE56787
Descripción	NPN SILICON HI FREQUNCY TRANSISTOR
Fabricantes	ASI
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No Preview Available ! www.DataSheet4U.com NE56787 NPN SILICON HI FREQUNCY TRANSISTOR DESCRIPTION: The ASI NE56787 is Designed for general purpose and ultra linear small signal amplifier applications up to 4.0 GHz. FEATURES INCLUDE: • Ideal for linear Class-A amplifiers MAXIMUM RATINGS: IC 60 mA VCBO 25 V VCEO 12 V VEBO 2.0 V PDISS 600 mW @ TA ≤ 75 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 40 °C/W PACKAGE STYLE .100 2L CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS ICBO VCB = 10 V IEBO VEB = 1.0 V hFE VCE = 10 V IC = 30 mA COB VCB = 10 V fs S21 2 = 0 dB f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 1.0 1.0 30 100 200 UNITS µA µA --- 0.44 0.80 pF 7.5 8.0 GHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 1 page

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PDF NE56787 Data sheet ( Hoja de datos )