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PDF USF5G49 Data sheet ( Hoja de datos )

Número de pieza USF5G49
Descripción (USF5x49) THYRISTOR SILICON PLANAR TYPE
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! USF5G49 Hoja de datos, Descripción, Manual

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SF5G49,SF5J49,USF5G49,USF5J49
TOSHIBA Thyristor Silicon Planar Type
SF5G49,SF5J49,USF5G49,USF5J49
Medium Power Control Applications
· Repetitive peak off-state voltage: VDRM = 400, 600 V
Repetitive peak reverse voltage: VRRM = 400, 600 V
· Average on-state current: IT (AV) = 5 A
· Gate trigger current: IGT = 70 µA max
Maximum Ratings
Characteristics
Repetitive peak off-state
voltage and Repetitive
peak reverse voltage
(RGK = 330 W)
SF5G49
USF5G49
SF5J49
USF5J49
Non-repetitive peak
reverse voltage
(non-repetitive < 5 ms,
Tj = 0~125°C,
RGK = 330 W)
Average on-state current
SF5G49
USF5G49
SF5J49
USF5J49
R.M.S on-state current
Peak one cycle surge on-state current
(non-repetitive)
I2t limit value
Peak gate power dissipation
Average gate power dissipation
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Junction temperature
Storage temperature range
Symbol
VDRM
VRRM
VRSM
IT (AV)
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VFGM
VRGM
IGM
Tj
Tstg
Rating
400
600
500
720
5
7.8
65 (50 Hz)
20
0.5
0.05
5
-5
200
-40~125
-40~125
Unit
V
V
A
A
A
A2s
W
W
V
V
mA
°C
°C
Unit: mm
JEDEC
JEITA
TOSHIBA
13-7F1A
Weight: 0.36 g (typ.)
Note: Should be used with gate resistance as follows:
Anode
Gate
RGK <= 330 W
Cathode
JEDEC
JEITA
TOSHIBA
13-F2A
Weight: 0.28 g (typ.)
1 2002-02-05

1 page




USF5G49 pdf
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SF5G49,SF5J49,USF5G49,USF5J49
104
dv/dt – CGK
(typ.)
104
dv/dt – CGK
(typ.)
103
RGK = 100 W
102
330 W
101
1 kW
100 3.3 kW
VD = 400 V
Ta = 75°C
CGK
10-110-3
10-2
RGK
10-1
100
Gate to cathode capacitance CGK (mF)
103
RGK = 100 W
102
330 W
101
1 kW
100
3.3 kW
VD = 400 V
Ta = 100°C
CGK
10-110-3
10-2
RGK
10-1
100
Gate to cathode capacitance CGK (mF)
VBO (Tc)/VBO (Tc = 25°C) – Tc
120
(typ.)
100 RGK = 100 W
330 W
80
1 kW
60
3.3 kW
40
10 kW
20
0
-80 -40
0
40 80 120 160 200
Case temperature Tc (°C)
5
2002-02-05

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