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PDF IHW30N60T Data sheet ( Hoja de datos )
| Número de pieza | IHW30N60T | |
| Descripción | IGBT | |
| Fabricantes | Infineon Technologies | |
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Soft Switching Series
IHW30N60T
q
Low Loss DuoPack : IGBT in TrenchStop® technology with optimised diode
Features:
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• TrenchStop® and Fieldstop technology for 600 V applications
offers :
G
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
PG-TO-247-3-21
• Low Gate Charge
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
E
Applications:
• Inductive Cooking
• Soft Switching Applications
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
IHW30N60T 600V
Maximum Ratings
30A
1.5V
175°C
Parameter
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C)
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Short circuit withstand time2)
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Marking
H30T60
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
-
Package
PG-TO-247-3-21
Value
600
60
30
90
90
23
13
30
±20
±25
5
187
-40...+175
-55...+175
260
Unit
V
A
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.1 Apr. 06
1 page  
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Soft Switching Series
IHW30N60T
q
80A
70A
60A
50A
40A
30A
VGE=20V
15V
13V
11V
9V
7V
20A
10A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
50A
VGE=20V
40A 15V
13V
30A 11V
9V
20A 7V
10A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
50A
40A
30A
20A
10A
TJ=175°C
25°C
0A
0V 2V 4V 6V 8V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=10V)
2.5V
2.0V
1.5V
1.0V
IC=60A
IC=30A
IC=15A
0.5V
0.0V
0°C
50°C
100°C
150°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
Power Semiconductors
5
Rev. 2.1 Apr. 06
5 Page 
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Soft Switching Series
IHW30N60T
q
i,v
di /dt
F
I
F
I
rrm
t =t +t
rr S F
Q =Q +Q
rr S
F
t
rr
tt
SF
Q
S
Q
F
10% I
rrm
t
di /dt
90% I r r
rrm
V
R
Figure A. Definition of switching times
Figure C. Definition of diodes
switching characteristics
τ1
r1
Tj (t)
p(t) r1
τ2
r2
r2
τn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Power Semiconductors
11
Rev. 2.1 Apr. 06
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IHW30N60T.PDF ] | |
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