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PDF IHW30N120R Data sheet ( Hoja de datos )
| Número de pieza | IHW30N120R | |
| Descripción | IGBT | |
| Fabricantes | Infineon Technologies | |
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Soft Switching Series
IHW30N120R
q
IGBT with monolithic body diode for soft switching Applications
Features:
• Powerful monolithic Body Diode
• Specified for TJmax = 175°C
• Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
Applications:
• Inductive Cooking
• Soft Switching Applications
C
G
E
PG-TO-247-3-21
Type
VCE
IC VCE(sat),Tj=25°C Tj,max
IHW30N120R 1200V 30A
1.55V
175°C
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C)
Marking
Package
H30R120 PG-TO-247-3-21
Symbol
VCE
IC
ICpuls
-
Value
1200
60
30
90
90
Unit
V
A
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp ≤ 2.5µs, sine halfwave
TC = 100°C, tp ≤ 2.5µs, sine halfwave
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
IF
IFpuls
IFSM
VGE
Ptot
Tj
Tstg
-
50
25
75
50
130
120
±20
±25
395
-40...+175
-55...+175
260
V
W
°C
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.2 May 06
1 page  
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Soft Switching Series
IHW30N120R
q
80A
70A VGE=20V
60A 15V
13V
50A 11V
40A 9V
7V
30A
20A
10A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
80A
70A VGE=20V
15V
60A 13V
50A 11V
9V
40A 7V
30A
20A
10A
0A
0V 1V 2V 3V 4V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
50A
40A
30A
20A
TJ=175°C
10A 25°C
0A
0V 2V 4V 6V 8V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
2.5V
IC=60A
2.0V
1.5V
1.0V
IC=30A
IC=15A
0.5V
0.0V
-50°C 0°C 50°C 100°C 150°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
Power Semiconductors
5
Rev. 2.2 May 06
5 Page 
www.DataSheet4U.com
Soft Switching Series
IHW30N120R
q
i,v
di /dt
F
I
F
I
rrm
t =t +t
rr S F
Q =Q +Q
rr S
F
t
rr
tt
SF
Q
S
Q
F
10% I
rrm
t
di /dt
90% I r r
rrm
V
R
Figure A. Definition of switching times
Figure C. Definition of diodes
switching characteristics
τ1
r1
Tj (t)
p(t) r1
τ2
r2
r2
τn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Power Semiconductors
11
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH
an d Stray capacity Cσ =39pF.
Rev. 2.2 May 06
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IHW30N120R.PDF ] | |
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