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PDF IHW15T120 Data sheet ( Hoja de datos )
| Número de pieza | IHW15T120 | |
| Descripción | IGBT in Trench and Fieldstop technology | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Soft Switching Series
IHW15T120
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
• Short circuit withstand time – 10µs
• Designed for :
- Soft Switching Applications
- Induction Heating
• Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
• Very soft, fast recovery anti-parallel EmCon™ HE diode
• Low EMI
• Application specific optimisation of inverse diode
C
G
E
Type
IHW15T120
VCE
1200V
IC
15A
VCE(sat),Tj=25°C
1.7V
Tj,max
150°C
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax, Tc=25°C
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp ≤ 2.5µs, sine halfwave
TC = 100°C, tp ≤ 2.5µs, sine halfwave
Gate-emitter voltage
Short circuit withstand time1)
VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C
Power dissipation, TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Marking
H15T120
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
tSC
Ptot
Tj
Tstg
-
Package Ordering Code
TO-247AC Q67040-S4651
Value
1200
30
15
45
45
Unit
V
A
23
13
36
50
130
120
±20
10
113
-40...+150
-55...+150
260
V
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2 Mar-04
1 page  
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^
Soft Switching Series
IHW15T120
40A
30A
TC=80°C
20A
10A
TC=110°C
Ic
Ic
0A
10Hz
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 56Ω)
10A
1A
0,1A
tp=2µs
10µs
50µs
200µs
500µs
2ms
DC
0,01A
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. IGBT Safe operating area
(D = 0, TC = 25°C,
Tj ≤150°C;VGE=15V)
100W
30A
80W
60W
20A
40W
20W
10A
0 W2 5 ° C
50°C
75°C 100°C 125°C
Figure 3.
TC, CASE TEMPERATURE
Power dissipation as a function of
case temperature
(Tj ≤ 150°C)
0A
25°C
75°C
125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≥ 15V, Tj ≤ 150°C)
Power Semiconductors
5
Rev. 2 Mar-04
5 Page 
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^
Soft Switching Series
IHW15T120
TJ=150°C
25A
20A TJ=25°C
15A
10A
5A
0A
200A/µs 400A/µs 600A/µs 800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current slope
(VR=600V, IF=8A,
Dynamic test circuit in Figure E)
-600A/µs
TJ=25°C
-500A/µs
-400A/µs
-300A/µs
TJ=150°C
-200A/µs
-100A/µs
-0A/µs
200A/µs 400A/µs 600A/µs 800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(VR=600V, IF=8A,
Dynamic test circuit in Figure E)
TJ=25°C
20A
150°C
10A
0A
0V 1V 2V
VF, FORWARD VOLTAGE
Figure 27. Typical diode forward current as
a function of forward voltage
2,0V
IF=15A
1,5V
1,0V
8A
5A
2,5A
0,5V
0,0V
-50°C
0°C
50°C 100°C
TJ, JUNCTION TEMPERATURE
Figure 28. Typical diode forward voltage
as a function of junction temperature
Power Semiconductors
11
Rev. 2 Mar-04
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet IHW15T120.PDF ] | |
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