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PDF IHW15N120R Data sheet ( Hoja de datos )

Número de pieza IHW15N120R
Descripción Reverse Conducting IGBT with monolithic body diode
Fabricantes Infineon Technologies 
Logotipo Infineon Technologies Logotipo



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Soft Switching Series
IHW15N120R
q
Reverse Conducting IGBT with monolithic body diode
Features:
Powerful monolithic Body Diode with very low forward voltage
Body diode clamps negative voltages
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
Inductive Cooking
Soft Switching Applications
C
G
E
PG-TO-247-3-21
Type
VCE
IC VCE(sat),Tj=25°C Tj,max
IHW20N120R 1200V
Maximum Ratings
20A
1.65V
175°C
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE 1200V, Tj 175°C)
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp 2.5µs, sine halfwave
TC = 100°C, tp 2.5µs, sine halfwave
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Marking
H20R120
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
Ptot
Tj
Tstg
-
Package
PG-TO-247-3-21
Value
1200
30
15
45
45
20
13
30
50
130
120
±20
±25
405
-40...+175
-55...+175
260
Unit
V
A
V
W
°C
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.1 July 06

1 page




IHW15N120R pdf
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Soft Switching Series
IHW15N120R
q
40A
VGE=20V
30A
15V
13V
20A 11V
9V
7V
10A
0A
0.0V 0.5V 1.0V 1.5V 2.0V 2.5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
40A
30A VGE=20V
15V
13V
20A 11V
9V
7V
10A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
40A
30A TJ=175°C
25°C
20A
10A
0A
0V 2V 4V 6V 8V 10V 12V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
3.5V
3.0V
IC=30A
2.5V
2.0V
IC=15A
1.5V
1.0V
IC=7.5A
0.5V
0.0V
-50°C 0°C 50°C 100°C 150°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE =15V)
Power Semiconductors
5
Rev. 2.1 July 06

5 Page





IHW15N120R arduino
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Soft Switching Series
IHW15N120R
q
i,v
di /dt
F
I
F
I
rrm
t =t +t
rr S F
Q =Q +Q
rr S
F
t
rr
tt
SF
Q
S
Q
F
10% I
rrm
t
di /dt
90% I r r
rrm
V
R
Figure A. Definition of switching times
Figure C. Definition of diodes
switching characteristics
τ1
r1
Tj (t)
p(t) r1
τ2
r2
r2
τn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH
an d Stray capacity Cσ =39pF.
Power Semiconductors
11
Rev. 2.1 July 06

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