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PDF W80NF55-06 Data sheet ( Hoja de datos )
| Número de pieza | W80NF55-06 | |
| Descripción | STW80NF55-06 | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STW80NF55-06
N-CHANNEL 55V - 0.005Ω - 80A TO-247
STripFET™ II POWER MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
STW80NF55-06
55 V < 0.0065 Ω
s TYPICAL RDS(on) = 0.005Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
ID
80 A
3
2
1
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature Size™"
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable
manufacturing reproducibility.
APPLICATIONS
s DC-AC & DC-DC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID (*)
Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
EAS (1) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
October 2001
Value
55
55
±20
80
80
320
300
2
1
– 55 to 175
(1) Starting Tj = 25°C, ID = 40A, VDD = 40V
(*) Current Limited by wire bonding
Unit
V
V
V
A
A
A
W
W/°C
J
°C
1/6
1 page  
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DIM.
A
D
E
F
F1
F2
F3
F4
G
H
L
L1
L2
L3
L4
L5
M
V
V2
Dia
MIN.
4.85
2.20
0.40
1
2
3
15.45
19.85
3.70
14.20
2
3.55
TO-247 MECHANICAL DATA
mm.
TYP
3
2
10.90
18.50
34.60
5.50
5º
60º
MAX.
5.15
2.60
0.80
1.40
2.40
3.40
15.75
20.15
4.30
14.80
3
3.65
MIN.
0.19
0.08
0.015
0.04
0.07
0.11
0.60
0.78
0.14
0.56
0.07
0.14
STW80NF55-06
inch
TYP.
0.11
0.07
0.43
0.72
1.36
0.21
5º
60º
MAX.
0.20
0.10
0.03
0.05
0.09
0.13
0.62
0.79
0.17
0.58
0.11
0.143
5/6
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| PDF Descargar | [ Datasheet W80NF55-06.PDF ] | |
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