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PDF 2N6093 Data sheet ( Hoja de datos )
| Número de pieza | 2N6093 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | ASI | |
| Logotipo |  |
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2N6093
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The 2N6093 is a High Gain Linear RF
Power Amplifier Used in Class A or
Class B Applications With Individual
Ballast Emitter Resistor and Built in
Temperature Sensing Diode.
MAXIMUM RATINGS
IC 10 A
VCE
PDISS
TJ
TSTG
θJC
35 V
83.3 W @ TC = 75 OC
-65 OC to +200 OC
-65 OC to +200 OC
1.50 OC/W
PACKAGE STYLE TO-217
¼-28 UNF Thread
1 = Emitter & Diode Cathode
2 = Collector
3 = Base
4 = Diode Anode
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCEO
IC = 200 mA
BVCES
ICES
IC = 200 mA
VCE = 60 V
TC = 55 OC
BVEBO
IE = 20 mA
hFE VCE = 6.0 V IC = 5.0 A
VF IF = 10 mA
hfe
VCE = 28 V
IC = 1.0 A
f = 50 MHz
COB
VCB = 30 V
f = 1.0 MHz
PIE
GPE
ηC
IMD
VCC = 28 V
IC = 20 mA POE = 37.5 W
f = 30 MHz POE = 75.0 W
VCC = 28 V
IC = 20 mA
POE = 75.0 W
f = 30 MHz
MINIMUM
35
70
3.5
20
2.0
13
40
NONE
TYPICAL MAXIMUM
30
0.8
250
1.88
3.75
-30
UNITS
V
V
mA
V
---
V
---
pF
W
dB
%
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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