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PDF EN25B16 Data sheet ( Hoja de datos )
| Número de pieza | EN25B16 | |
| Descripción | 16 Mbit Serial Flash Memory | |
| Fabricantes | Eon | |
| Logotipo |  |
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EN25B16
EN25B16
16 Mbit Serial Flash Memory with Boot and Parameter Sectors
FEATURES
• Single power supply operation
- Full voltage range: 2.7-3.6 volt
• 16 M-bit Serial Flash
- 16 M-bit/2048 K-byte/8192 pages
- 256 bytes per programmable page
• High performance
- 100MHz clock rate
• Low power consumption
- 5 mA typical active current
- 1 μA typical power down current
• Flexible Sector Architecture:
- Two 4-Kbyte, one 8-Kbyte, one 16-Kbyte,one
32-Kbyte, and thirty one 64-Kbyte sectors
• Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
• High performance program/erase speed
- Byte program time: 7µs typical
- Page program time: 1.5ms typical
- Sector erase time: 300 to 800ms typical
- Chip erase time: 18 Seconds typical
• Minimum 100K endurance cycle
• Package Options
- 8 pins SOP 200mil body width
- 8 contact VDFN
- 16 pin SOP 300mil body width
- All Pb-free packages are RoHS compliant
• Commercial and industrial temperature
Range
GENERAL DESCRIPTION
The EN25B16 is a 16M-bit (2048K-byte) Serial Flash memory, with advanced write protection
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to
256 bytes at a time, using the Page Program instruction.
The EN25B16 has thirty six sectors including thirty one sectors of 64KB, one sector of 32KB, one sector
of 16KB, one sector of 8KB and two sectors of 4KB. This device is designed to allow either single Sector
at a time or full chip erase operation. The EN25B16 can protect boot code stored in the small sectors for
either bottom or top boot configurations. The device can sustain a minimum of 100K program/erase cycles
on each sector.
This Data Sheet may be revised by subsequent versions 1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/22
1 page  
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EN25B16
MEMORY ORGANIZATION
The memory is organized as:
z 2,097,152 bytes
z Flexible Sector Architecture
Two 4-Kbyte, one 8-Kbyte, one 16-Kbyte,one 32-Kbyte, and thirty one 64-Kbyte sectors
z Bottom or top boot configurations
z 8192 pages (256 bytes each)
Each page can be individually programmed (bits are programmed from 1 to 0). The device is Sector or
Bulk Erasable but not Page Erasable.
Table 2a. Bottom Boot Block Sector Architecture
Sector
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
SECTOR SIZE (KByte)
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
32
16
8
4
4
Address range
1F0000h – 1FFFFFh
1E0000h – 1EFFFFh
1D0000h – 1DFFFFh
1C0000h – 1CFFFFh
1B0000h – 1BFFFFh
1A0000h – 1AFFFFh
190000h – 19FFFFh
180000h – 18FFFFh
170000h – 17FFFFh
160000h – 16FFFFh
150000h – 15FFFFh
140000h – 14FFFFh
130000h – 13FFFFh
120000h – 12FFFFh
110000h – 11FFFFh
100000h – 10FFFFh
0F0000h – 0FFFFFh
0E0000h – 0EFFFFh
0D0000h – 0DFFFFh
0C0000h – 0CFFFFh
0B0000h – 0BFFFFh
0A0000h – 0AFFFFh
090000h – 09FFFFh
080000h – 08FFFFh
070000h – 07FFFFh
060000h – 06FFFFh
050000h – 05FFFFh
040000h – 04FFFFh
030000h – 03FFFFh
020000h – 02FFFFh
010000h – 01FFFFh
008000h – 00FFFFh
004000h – 007FFFh
002000h – 003FFFh
001000h – 001FFFh
000000h – 000FFFh
This Data Sheet may be revised by subsequent versions
5
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/22
5 Page 
www.DataSheet4U.com
EN25B16
Table 4. Instruction Set
Instruction Name
Write Enable
Write Disable
Read Status
Register
Write Status
Register
Read Data
Fast Read
Page Program
Sector Erase
Bulk Erase
Deep Power-down
Release from Deep
Power-down, and
read Device ID
Release from Deep
Power-down
Manufacturer/
Device ID
Read Identification
Byte 1
Code
06h
04h
05h
01h
03h
0Bh
02h
D8h
C7h
B9h
ABh
90h
9Fh
Byte 2
Byte 3
Byte 4 Byte 5 Byte 6
n-Bytes
(S7-S0)(1)
S7-S0
A23-A16
A23-A16
A23-A16
A23-A16
A15-A8
A15-A8
A15-A8
A15-A8
continuous
(2)
A7-A0
A7-A0
A7-A0
A7-A0
(D7-D0)
dummy
D7-D0
(Next byte)
(D7-D0)
(Next byte)
continuous
(Next Byte)
continuous
continuous
dummy
dummy dummy (ID7-ID0)
(4)
dummy
(M7-M0)
dummy
(ID15-ID8)
00h(5) (M7-M0)
(ID7-ID0)
(ID7-ID0)
Notes:
1. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “( )” indicate data being read from
the device on the DO pin.
2. The Status Register contents will repeat continuously until CS# terminate the instruction.
3. All sectors may use any address within the sector.
4. The Device ID will repeat continuously until CS# terminate the instruction.
5. The Manufacturer ID and Device ID bytes will repeat continuously until CS# terminate the instruction.
00h on Byte 4 starts with MID and alternate with DID, 01h on Byte 4 starts with DID and alternate with MID.
Table 5. Manufacturer and Device Identification
Boot Type
OP Code
(M7-M0)
ABh
EN25B16(Bottom Boot)
90h 1Ch
9Fh 1Ch
ABh
EN25B16T(Top Boot)
90h 1Ch
9Fh 1Ch
(ID15-ID0) (ID7-ID0)
34h
34h
2015h
44h
44h
2015h
This Data Sheet may be revised by subsequent versions 11 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2006/12/22
11 Page | ||
| Páginas | Total 36 Páginas | |
| PDF Descargar | [ Datasheet EN25B16.PDF ] | |
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