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PDF TC429 Data sheet ( Hoja de datos )

Número de pieza TC429
Descripción CMOS POWER MOSFET DRIVER
Fabricantes TelCom Semiconductor 
Logotipo TelCom Semiconductor Logotipo



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1
TC429
6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER
FEATURES
s High Peak Output Current .................................. 6A
s Wide Operating Range ............................. 7V to 18V
s High-Impedance CMOS Logic Input
s Logic Input Threshold Independent of
Supply Voltage
s Low Supply Current
— With Logic 1 Input ................................ 5mA Max
— With Logic 0 Input ............................. 0.5mA Max
s Output Voltage Swing Within 25 mV of Ground
or VDD
s Short Delay Time .................................. 75nsec Max
s High Capacitive Load Drive Capability
— tRISE, tFALL = 35nsec Max With CLOAD = 2500pF
APPLICATIONS
s Switch-Mode Power Supplies
s CCD Drivers
s Pulse Transformer Drive
s Class D Switching Amplifiers
PIN CONFIGURATION
VDD 1
INPUT 2
8 VDD
7 OUTPUT
NC 3
6 OUTPUT
GND 4
TC429
5 GND
NC = NO INTERNAL CONNECTION
NOTE: Duplicate pins must both be connected for proper operation.
TYPICAL APPLICATION
GENERAL DESCRIPTION
The TC429 is a high-speed, single CMOS-level transla-
tor and driver. Designed specifically to drive highly capaci-
tive power MOSFET gates, the TC429 features 2.5output
impedance and 6A peak output current drive.
A 2500pF capacitive load will be driven 18V in 25nsec.
Delay time through the device is 60nsec. The rapid switching
times with large capacitive loads minimize MOSFET transi-
tion power loss.
A TTL/CMOS input logic level is translated into an
output voltage swing that equals the supply and will swing
to within 25mV of ground or VDD. Input voltage swing may
equal the supply. Logic input current is under 10µA, making
direct interface to CMOS/bipolar switch-mode power supply
controllers easy. Input "speed-up" capacitors are not
required.
The CMOS design minimizes quiescent power supply
current. With a logic 1 input, power supply current is 5mA
maximum and decreases to 0.5mA for logic 0 inputs.
For dual devices, see the TC426/TC427/TC428
data sheet.
For noninverting applications, or applications requiring
latch-up protection, see the TC4420/TC4429 data sheet.
ORDERING INFORMATION
Part No.
TC429CPA
TC429EPA
TC429MJA
Package
8-Pin Plastic DIP
8-Pin Plastic DIP
8-Pin CerDIP
Temperature
Range
0°C to +70°C
– 40°C to +85°C
– 55°C to +125°C
1,8
VDD
2
3
4
5
6
300mV
6,7
OUTPUT
7
2
INPUT
GND
4,5
EFFECTIVE
INPUT
C = 38pF
TELCOM SEMICONDUCTOR, INC.
TC429
8
TC429-4 10/11/96
4-175

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TC429 pdf
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6A SINGLE HIGH-SPEED,
CMOS POWER MOSFET DRIVER
1
TC429
Three components make up total package power dissi-
pation:
(1) Capacitive load dissipation (PC)
(2) Quiescent power (PQ)
(3) Transition power (PT)
The capacitive load-caused dissipation is a direct func-
tion of frequency, capacitive load, and supply voltage. The
package power dissipation is:
PC = f C VS2,
where: f = Switching frequency
C = Capacitive load
VS = Supply voltage.
Quiescent power dissipation depends on input signal
duty cycle. A logic low input results in a low-power dissipa-
tion mode with only 0.5 mA total current drain. Logic high
signals raise the current to 5 mA maximum. The quiescent
power dissipation is:
PQ = VS (D (IH) + (1–D) IL),
where: IH = Quiescent current with input high (5 mA max)
IL = Quiescent current with input low (0.5 mA max)
D = Duty cycle.
Transition power dissipation arises because the output
stage N- and P-channel MOS transistors are ON simulta-
neously for a very short period when the output changes.
The transition package power dissipation is approximately:
PT = f VS (3.3 x 10–9 A · Sec).
An example shows the relative magnitude for each item.
Example 1:
C = 2500 pF
VS = 15V
D = 50%
f = 200 kHz
PD = Package power dissipation = PC + PT + PQ
= 113 mW + 10 mW + 41 mW
= 164 mW.
Maximum operating temperature = TJ θJA (PD)
= 125°C,
where: TJ = Maximum allowable junction temperature
(+150°C)
θJA = Junction-to-ambient thermal resistance
(150°C/W, CerDIP).
NOTE: Ambient operating temperature should not exceed +85°C for
IJA devices or +125°C for MJA devices.
TELCOM SEMICONDUCTOR, INC.
Table 1. Maximum Operating Frequencies
VS fMax
18V 500 kHz
15V 700 kHz
10V 1.3 MHz
5V >2 MHz
CONDITIONS: 1. CerDIP Package (θJA = 150°C/W)
2. TA = +25°C
3. CL = 2500 pF
Thermal Derating Curves
1600
1400
1200
1000
8 Pin DIP
8 Pin CerDIP
800
8 Pin SOIC
600
400
200
0
0 10 20 30 40 50 60 70 80 90 100 110 120
AMBIENT TEMPERATURE (°C)
2
3
4
Peak Output Current Capability
5
6
POWER-ON OSCILLATION
It is extremely important that all MOSFET DRIVER
applications be evaluated for the possibility of having
HIGH-POWER OSCILLATIONS occurring during the
POWER-ON cycle.
POWER-ON OSCILLATIONS are due to trace size and
layout as well as component placement. A ‘quick fix’ for most
applications which exhibit POWER-ON OSCILLATION prob-
lems is to place approximately 10 kin series with the input
of the MOSFET driver.
7
8
4-179

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