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Número de pieza | PD84008L-E | |
Descripción | Transistors | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
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PD84008L-E
RF power transistor, LdmoST plastic family
N-channel enhancement-mode lateral MOSFETs
Preliminary Data
Features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 8 W with 13 dB gain @ 870 MHz / 7.5 V
■ Plastic package
■ ESD protection
■ In compliance with the 2002/95/EC european
directive
PowerFLATTM (5mm x 5mm)
Description
The is a common source N-channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial applications. It
operates at 7.5 V in common source mode at
frequencies of up to 1 GHz. boasts the excellent
gain, linearity and reliability of ST’s latest LDMOS
technology mounted in leadless SMD plastic RF
power package , PowerFLATTM. ’s superior
linearity performance makes it an ideal solution
for portable radio applications.
Figure 1. Pin connection
Table 1. Device summary
Order code
PD84008L-E
Marking
84008
Package
PowerFLATTM
Packing
Tape and reel
December 2007
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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14
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PD84008L-E
3 Impedance
Figure 2. Current conventions
Impedance
Table 8. Impedance data
Freq. (MHz)
870 MHz
ZIN (Ω)
TBD
ZDL(Ω)
TBD
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PD84008L-E
Table 10. Tape and reel dimensions
Dim.
Ao
Bo
Ko
Min.
5.15
5.15
1.0
Figure 12. Tape and reel dimensions
Package mechanical data
Mm
Typ Max.
5.25 5.35
5.25 5.35
1.1 1.2
11/14
11 Page |
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