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PDF FC40SA50FK Data sheet ( Hoja de datos )

Número de pieza FC40SA50FK
Descripción HEXFET Power MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! FC40SA50FK Hoja de datos, Descripción, Manual

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I27139- 01/03
FC40SA50FK
Applications
! Switch Mode Power Supply (SMPS)
! Uninterruptible Power Supply
! High Speed Power Switching
! Hard Switched and High Frequency Circuits
VDSS
500V
HEXFET® Power MOSFET
RDS(on) typ.
0.084
ID
40A
Benefits
! Low Gate Charge Qg results in Simple
Drive Requirement
! Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
! Fully Characterized Capacitance and
Avalanche Voltage and Current
! Low RDS(on)
! Fully Insulated Package
SOT-227
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current "
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt #
Operating Junction and
Storage Temperature Range
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy$
Avalanche Current"
Repetitive Avalanche Energy"
Thermal Resistance
Symbol
RθJC
RθCS
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Max.
40
26
160
430
3.45
± 30
9.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Typ.
Typ.
0.05
Max.
1240
40
43
Units
mJ
A
mJ
Max.
0.29
Units
°C/W
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FC40SA50FK pdf
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40
30
20
10
0
25 50 75 100 125 150
TC, Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
1.000
I27139- 01/03
FC40SA50FK
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
0.100
0.010
D = 0.50
0.30
0.10
0.05
0.02
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci i/Ri
R2R2
τ2 τ2
R3R3 Ri (°C/W)
τCτ 0.161
τ3τ3 0.210
0.147
τi (sec)
0.000759
0.017991
0.06094
Notes:
1. Duty factor D = t1/t2
2. Peak TJ=PDM x ZthJC + TC
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (s)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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