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PDF CL100B Data sheet ( Hoja de datos )
| Número de pieza | CL100B | |
| Descripción | NPN SILICON PLANAR TRANSISTORS | |
| Fabricantes | CDIL | |
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Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR TRANSISTORS
IS/ISO 9002
Lic# QSC/L- 000019.2
CL 100, A, B
CK 100, A, B
TO-39
Metal Can Package
CL100 And CK 100 Are Medium Power Transistors Suitable For Awide Range
Of Medium Voltage And Current Amplifier Applications.
Complementary CK100, A, B
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
Collector -Emitter Voltage
VCER
50
Collector -Base Voltage
VCBO
60
Emitter Base Voltage
VEBO
5
Collector Current-Continuous
ICM
1
Power Dissipation @ Ta=25ºC
PD
800
Derate above 25ºC
5.33
Total device dissipation @ Tc=25ºC
PD
3
Derate above 25ºC
20
Operating And Storage Junction
Tj, Tstg
-55 to +175
Temperature Range
UNITS
V
V
V
A
mW
mW /°C
W
mW /°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Breakdown Voltage BVCER * IC =10mA, IB =0
Collector Base Breakdown Voltage BVCBO IC =100µA, IE =0
Emitter Base Breakdown Voltage
BVEBO IE=100µA, IC=0
Collector Leakage Current
ICBO VCB=40V, IE=0
Emitter Leakage Current
IEBO VEB=4V, IE=0
DC Current Gain
hFE * IC=150mA,VCE=10V
Base Emitter On Voltage
VBE(on)* VCE=1V, IC=150mA,
Collector Emitter (Sat) Voltage
VCE(sat)* IC=150mA,IB=15mA
MIN
50
60
5
40
CLASSIFICATION
HFE
A
40-120
B
100-300
*Pulse Condition : PW <300us, Duty Cycle < 2%
TYP MAX
50
1
300
0.9
0.6
UNIT
V
V
V
nA
µA
V
V
Continental Device India Limited
Data Sheet
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet CL100B.PDF ] | |
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