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PDF C5931 Data sheet ( Hoja de datos )
| Número de pieza | C5931 | |
| Descripción | NPN Transistor - 2SC5931 | |
| Fabricantes | Panasonic Semiconductor | |
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2SC5931
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV, CRT monitor
I Features
• High breakdown voltage: VCBO ≥ 1 700 V
• High speed switching: tf < 200 ns
• Wide safe operation area
I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Base current
Collector current
Peak collector current *
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCES
VCEO
VEBO
IB
IC
ICP
PC
Tj
Tstg
1 700
1 700
600
7
7.5
15
25
60
3
150
−55 to +150
Note) *: Non-repetitive peak collector current
Unit
V
V
V
V
A
A
A
W
°C
°C
Unit: mm
15.5±0.5 φ 3.2±0.1
5˚
3.0±0.3
5˚
(4.0)
2.0±0.2
5˚
5˚
5˚
1.1±0.1
0.7±0.1
5.45±0.3
10.9±0.5
5˚
12 3
1: Base
2: Collector
3: Emitter
EIAJ: SC-94
TOP-3E-A1 Package
Marking Symbol: C5931
Internal Connection
C
B
E
I Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base cutoff current (Emitter open) ICBO VCB = 1 000 V, IE = 0
50 µA
VCB = 1 700 V, IE = 0
1 mA
Emitter-base cutoff current (Collector open) IEBO VEB = 7 V, IC = 0
50 µA
Forward current transfer ratio
hFE VCE = 5 V, IC = 7.5 A
5 10
Collector-emitter saturation voltage
VCE(sat) IC = 7.5 A, IB = 1.88 A
3V
Base-emitter saturation voltage
VBE(sat) IC = 7.5 A, IB = 1.88 A
1.5 V
Transition frequency
fT VCE = 10 V, IC = 0.1 A, f = 0.5 MHz
3 MHz
Storage time
tstg IC = 7.5 A, Resistance loaded
2.7 µs
Fall time
tf IB1 = 1.88 A, IB2 = −3.75 A
0.2 µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2004
SJD00314AED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet C5931.PDF ] | |
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