PDF K6R4008V1C Data sheet ( Hoja de datos )

Número de pieza	K6R4008V1C
Descripción	512Kx8 Bit High Speed Static
Fabricantes	Samsung semiconductor
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No Preview Available ! www.DataSheet4U.com K6R4008V1C-C/C-L, K6R4008V1C-I/C-P PRELIMINARY CMOS SRAM 3Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. Revision History RevNo. History Rev. 0.0 Initial release with Preliminary. Rev. 1.0 1.1 Removed Low power Version. 1.2 Removed Data Retention Characteristics. 1.3 Changed ISB1 to 20mA Rev. 2.0 Relax D.C parameters. Item 12ns ICC 15ns 20ns Previous 160mA 155mA 150mA Current 195mA 190mA 185mA Draft Data Feb. 12. 1999 Mar. 29. 1999 Remark Preliminary Preliminary Aug. 19. 1999 Preliminary Rev. 3.0 3.1 Delete Preliminary 3.2 Update D.C parameters and 10ns part. 10ns 12ns 15ns 20ns ICC - 195mA 190mA 185mA Previous Isb 70mA Isb1 20mA ICC 155mA 145mA 135mA 125mA Current Isb 60mA Isb1 10mA Rev. 4.0 Add Low Power-Ver. Rev. 5.0 Delete 20ns speed bin Mar. 27. 2000 Final Apr. 24. 2000 Sep. 24. 2001 Final Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques- tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Rev 5.0 September 2001 1 page www.DataSheet4U.com K6R4008V1C-C/C-L, K6R4008V1C-I/C-P PRELIMINARY CMOS SRAM AC CHARACTERISTICS(TA=0 to 70°C, VCC=3.3±0.3V, unless otherwise noted.) TEST CONDITIONS* Parameter Input Pulse Levels Input Rise and Fall Times Input and Output timing Reference Levels Output Loads The above test conditions are also applied at industrial temperature range. Value 0V to 3V 3ns 1.5V See below Output Loads(A) DOUT ZO = 50Ω RL = 50Ω VL = 1.5V 30pF Output Loads(B) for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ DOUT 353Ω +3.3V 319Ω 5pF* * Capacitive Load consists of all components of the test environment. * Including Scope and Jig Capacitance READ CYCLE* Parameter Read Cycle Time Address Access Time Chip Select to Output Output Enable to Valid Output Chip Enable to Low-Z Output Output Enable to Low-Z Output Chip Disable to High-Z Output Output Disable to High-Z Output Output Hold from Address Change Chip Selection to Power Up Time Chip Selection to Power DownTime Symbol tRC tAA tCO tOE tLZ tOLZ tHZ tOHZ tOH tPU tPD K6R4008V1C-10 Min Max 10 - - 10 - 10 -5 3- 0- 05 05 3- 0- - 10 * The above parameters are also guaranteed at industrial temperature range. K6R4008V1C-12 Min Max 12 - - 12 - 12 -6 3- 0- 06 06 3- 0- - 12 K6R4008V1C-15 Min Max 15 - - 15 - 15 -7 3- 0- 07 07 3- 0- - 15 Unit ns ns ns ns ns ns ns ns ns ns ns -5- Rev 5.0 September 2001 5 Page

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