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PDF IRF9540NLPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF9540NLPBF | |
| Descripción | HEXFET POWER MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 96030
l Advanced Process Technology
l Ultra Low On-Resistance
l 150°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Some Parameters are Different from
IRF9540NS/L
l P-Channel
l Lead-Free
Description
Features of this design are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in a wide
variety of other applications.
IRF9540NSPbF
IRF9540NLPbF
HEXFET® Power MOSFET
D
VDSS = -100V
G RDS(on) = 117mΩ
S ID = -23A
DD
S
GD
D2Pak
IRF9540NSPbF
S
GD
TO-262
IRF9540NLPbF
Absolute Maximum Ratings
G
Gate
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
cPulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy
cAvalanche Current
cRepetitive Avalanche Energy
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθJA
www.irf.com
Junction-to-Case
gJunction-to-Ambient (PCB Mount, steady state)
D
Drain
Max.
-23
-14
-92
3.1
110
0.9
± 20
84
-14
11
-13
-55 to + 150
300 (1.6mm from case )
Typ.
–––
–––
Max.
1.1
40
S
Source
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
09/30/05
1 page  
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24
20
16
12
8
4
0
25
50 75 100 125
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
150
IRF9540NS/LPbF
VDS
VGS
RG
RD
D.U.T.
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3 Ri (°C/W) τi (sec)
τC 0.1737838 0.0000610
τ3τ3 0.4335992 0.0019590
0.4921007 0.0260060
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page 
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IRF9540NLPBF.PDF ] | |
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