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PDF S9724 Data sheet ( Hoja de datos )
| Número de pieza | S9724 | |
| Descripción | (S9723 / S9724) Si PIN photodiode Large area Si PIN photodiode | |
| Fabricantes | Hamamatsu Corporation | |
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PHOTODIODE
Si PIN photodiode
S9723, S9724
Large area Si PIN photodiode for direct detection
S9723 and S9724 are large-area Si detectors specifically designed for the direct detection of high-energy charged particles and X-rays. These Si
detectors are mounted on PC boards with holes for the purpose of ∆E-E detection of charged particles. These detector’s thicknesses are 100 ± 5
µm (S9723) and 10 ± 2.5 µm (S9724). Thickness uniformities of the active area are as good as 2.0 µm Typ. (S9723) and 1.0 µm Typ. (S9724).
This ensures excellent sensitivity uniformity over the entire active area.
Features
l Large area
l Low dark current
l Thickness uniformity *1 : 2 µm (S9723)
1 µm (S9724)
l Active area : 26 × 26 × 0.1 t mm (S9723)
10 × 10 × 0.01 t mm (S9724)
Applications
l Heavy ions energy detection
l X-ray detection
l ∆E-E detection
s Specifications/Absolute maximum ratings
Parameter
Symbol
Active area
-
Detector thickness
-
Thickness uniformity *1
-
Surface orientation
-
Dead layer Front side
thickness *2 Rear side
-
Reverse voltage
VR Max.
Current
-
Operating temperature *3 Topr
Storage temperature *3
Tstg
*1: Variation in the detector thickness
*2: Reference value
*3: No condensation
S9723
26 × 26
100 ± 5
2.0
20
(111)
1
1
2
0 to +60
0 to +80
S9724
10 × 10
10 ± 2.5
1.0
2
s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Parameter
Symbol
Condition
S9723
Min. Typ. Max.
Full depletion voltage
VD
- 5 10
Dark current
ID VR=VD
- 2 50
Rise time
tr VR=VD, RL=50 Ω
-
80
-
Terminal capacitance
Ct VR=VD, f=1 MHz
-
0.75
-
Min.
-
-
-
-
S9724
Typ.
0.5
0.01
100
1
Max.
1
0.1
-
-
Unit
mm
µm
µm
-
µm
V
mA
°C
°C
Unit
V
nA
ns
nF
PRELIMINARY DATA
Sep. 2004
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet S9724.PDF ] | |
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