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PDF IPW50R140CP Data sheet ( Hoja de datos )

Número de pieza IPW50R140CP
Descripción Power Transistor
Fabricantes Infineon Technologies 
Logotipo Infineon Technologies Logotipo



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No Preview Available ! IPW50R140CP Hoja de datos, Descripción, Manual

CoolMOSTM Power Transistor
Features
• Worldwide best R DS ,on in TO220
• Lowest figure of merit RON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant
• Quailfied according to JEDEC1) for target applications
Product Summary
V DS @Tjmax
R DS(on),max
Q g,typ
IPW50R140CP
550 V
0.140
48 nC
PG-TO247
CoolMOS CP is designed for:
• Hard & soft switching SMPS topologies
• CCM PFC for ATX, Notebookadapter & PDP and LCD TV
• PWM for ATX, Notebook adapter, PDP and LCD TV
Type
IPW50R140CP
Package
PG-TO247
Marking
5R140P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
ID
I D,pulse
E AS
E AR
I AR
dv /dt
T C=25 °C
T C=100 °C
T C=25 °C
I D=9.3 A, V DD=50 V
I D=9.3 A, V DD=50 V
V DS=0...400 V
Gate source voltage
V GS static
AC (f >1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
Mounting torque
M3 and M3.5 screws
Value
23
15
56
616
0.93
9.3
50
±20
±30
192
-55 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
Rev. 2.1
page 1
2008-01-21

1 page




IPW50R140CP pdf
5 Typ. output characteristics
I D=f(V DS); T j=150 °C
parameter: V GS
50
20 V
10 V
40 8 V 7 V
6V
30
5.5 V
20
5V
10 4.5 V
IPW50R140CP
6 Typ. drain-source on-state resistance
R DS(on)=f(I D); T j=150 °C
parameter: V GS
0.8
7V
0.7 10 V
6.5 V
0.6
0.5 6 V
5.5 V
0.4
0.3
0
0 5 10 15
V DS [V]
7 Drain-source on-state resistance
R DS(on)=f(T j); I D=14 A; V GS=10 V
20
0.35
0.2
25 0 10 20 30 40 50 60
I D [A]
8 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
100
0.3
0.25
0.2
0.15
0.1
98 %
typ
80
60
40
20
25 °C
150 °C
0.05
-60 -20 20
60 100 140 180
T j [°C]
0
0 2 4 6 8 10
V GS [V]
Rev. 2.1
page 5
2008-01-21

5 Page










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