DataSheet.es    


PDF IPW50R199CP Data sheet ( Hoja de datos )

Número de pieza IPW50R199CP
Descripción Power Transistor
Fabricantes Infineon Technologies 
Logotipo Infineon Technologies Logotipo



Hay una vista previa y un enlace de descarga de IPW50R199CP (archivo pdf) en la parte inferior de esta página.


Total 10 Páginas

No Preview Available ! IPW50R199CP Hoja de datos, Descripción, Manual

www.DataSheet4U.com
CoolMOSTM Power Transistor
Features
• Lowest figure of merit RON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant
• Quailfied according to JEDEC1) for target applications
Product Summary
V DS @Tjmax
R DS(on),max
Q g,typ
IPW50R199CP
550 V
0.199
34 nC
PG-TO247
CoolMOS CP is designed for:
• Hard & soft switching SMPS topologies
• CCM PFC for ATX, Notebook adapter, PDP and LCD TV
• PWM for ATX, Notebook adapter, PDP and LCD TV
Type
Package
Marking
IPW50R199CP
PG-TO247
5R199P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
Gate source voltage
I D,pulse
E AS
E AR
I AR
dv /dt
V GS
T C=100 °C
T C=25 °C
I D=6.6 A, V DD=50 V
I D=6.6 A, V DD=50 V
V DS=0...400 V
static
AC (f>1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
Mounting torque
M3 and M3.5 screws
Rev. 1.01
page 1
Value
17
11
40
436
0.66
6.6
50
±20
±30
139
-55 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2007-02-06

1 page




IPW50R199CP pdf
www.DataSheet4U.com
5 Typ. output characteristics
I D=f(V DS); T j=150 °C
parameter: V GS
35
30
25
20
15
10
5
20 V
10 V
8V
7V 6V
5.5 V
5V
4.5 V
IPW50R199CP
6 Typ. drain-source on-state resistance
R DS(on)=f(I D); T j=150 °C
parameter: V GS
1.2
1.1
1 7V
0.9 6.5 V
10 V
0.8
6V
0.7
5.5 V
0.6
0.5
0.4
0
0 5 10 15
V DS [V]
7 Drain-source on-state resistance
R DS(on)=f(T j); I D=9.9 A; V GS=10 V
20
0.6
0.3
25 0
10 20
I D [A]
8 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
60
30 40
25 °C
0.5 50
0.4 40
98 %
0.3 typ 30
0.2 20
150 °C
0.1 10
00
-60 -20 20 60 100 140 180
0 2 4 6 8 10
T j [°C]
V GS [V]
Rev. 1.01
page 5
2007-02-06

5 Page










PáginasTotal 10 Páginas
PDF Descargar[ Datasheet IPW50R199CP.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
IPW50R199CPPower TransistorInfineon Technologies
Infineon Technologies

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar