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Número de pieza | FGA25N120ANTD | |
Descripción | NPT Trench IGBT | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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FGA25N120ANTD
1200 V, 25 A NPT Trench IGBT
Features
• NPT Trench Technology, Positive Temperature Coefficient
• Low Saturation Voltage: VCE(sat), typ = 2.0 V
@ IC = 25 A and TC = 25C
• Low Switching Loss: Eoff, typ = 0.96 mJ
@ IC = 25 A and TC = 25C
• Extremely Enhanced Avalanche Capability
Applications
• Induction Heating, Microwave Oven
Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation. This device is well suited for the reso-
nant or soft switching application such as induction heating,
microwave oven.
GCE
TO-3P
Absolute Maximum Ratings
Symbol
Description
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25C
@ TC = 100C
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 25C
@ TC = 100C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25C
@ TC = 100C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(DIODE)
RJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2006 Fairchild Semiconductor Corporation
FGA25N120ANTD Rev. C1
1
C
G
E
Ratings
1200
20
50
25
90
50
25
150
312
125
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
A
A
W
W
C
C
C
Typ.
--
--
--
Max.
0.4
2.0
40
Unit
C/W
C/W
C/W
www.fairchildsemi.com
1 page Typical Performance Characteristics (Continued)
Figure 7. Capacitance Characteristics
Figure 8. Turn-On Characteristics vs. Gate
Resistance
5000
4500 Ciss
4000
3500
3000
2500
2000
1500
1000
500
Coss
Crss
0
1
Common Emitter
V = 0V, f = 1MHz
GE
T = 25C
C
10
Collector-Emitter Voltage, V [V]
CE
100
tr
td(on)
10
0
10
Common Emitter
V = 600V, V = 15V
CC GE
I = 25A
C
T = 25C
C
T = 125C
C
20 30 40 50 60 70
Gate Resistance, R []
G
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
1000
td(off)
100
Common Emitter
V = 600V, V = 15V
CC GE
I = 25A
C
T = 25C
C
T = 125C
C
10
0 10 20 30 40 50
Gate Resistance, R []
G
tf
60 70
Figure 10. Switching Loss vs. Gate Resistance
Common Emitter
V = 600V, V = 15V
CC GE
I = 25A
C
10
T = 25C
C
T = 125C
C
Eon
Eoff
1
0 10 20 30 40 50 60 70
Gate Resistance, R []
G
Figure 11. Turn-On Characteristics vs.
Collector Current
Common Emitter
V = 15V, R = 10
GE G
T = 25C
C
T = 125C
C
100
tr
td(on)
10 20 30 40 50
Collector Current, I [A]
C
Figure 12. Turn-Off Characteristics vs.
Collector Current
td(off)
100 tf
Common Emitter
V = 15V, R = 10
GE G
T = 25C
C
T = 125C
C
10 20 30 40
Collector Current, I [A]
C
50
©2006 Fairchild Semiconductor Corporation
FGA25N120ANTD Rev. C1
5
www.fairchildsemi.com
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet FGA25N120ANTD.PDF ] |
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